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NLAS4051SDTR2G

Onsemi

NLAS4051SDTR2G by Onsemi

NLAS4051SDTR2G by Onsemi is a CMOS single-ended multiplexer with 8 channels. It operates b/w -55 to 125 °C and has a max on-state resistance of 26 ohm. With a package size of 5x4.4 mm, it's ideal for military-grade applications requiring high isolation and fast switching times.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Vyrian

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AZTECH Wire

Italy . 453 parts In-Stock

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TANS Electronics

Latvia . 8,049 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

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Corphita

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SupplyDigital Components

Austria . 836 parts In-Stock

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UHIMA Technologies

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Microchip USA

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Overview

Enhance your electronic designs with the NLAS4051SDTR2G by Onsemi, a high-quality single-ended multiplexer that offers unparalleled performance and reliability. Manufactured by industry leader Onsemi, this versatile device is ideal for a wide range of applications in the Multiplexers & Switches category. With its compact design and advanced CMOS technology, this multiplexer provides fast switching times and low on-state resistance, ensuring seamless operation in demanding environments. Elevate your projects with the NLAS4051SDTR2G and experience superior functionality and value like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material provides durability and helps in preventing damage to the internal components of the product.

Nominal Supply Voltage (Vsup): 3 V

Provides a stable voltage supply for the product to operate efficiently.

No. of Channels: 8

Allows for multiple inputs to be switched or multiplexed, increasing the versatility of the product.

Maximum On-state Resistance (Ron): 26 ohm

Low on-state resistance ensures minimal signal loss when switching or multiplexing channels.

Technology: CMOS

CMOS technology provides high-speed operation and low power consumption, making the product efficient and reliable.

Technical Specifications

Multiplexers & Switches NLAS4051SDTR2G attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

5 mm

Maximum Negative Supply Voltage (Vsup):

-5.5 V

Nominal Negative Supply Voltage (Vsup):

-3 V

No. of Channels:

8

No. of Functions:

1

No. of Terminals:

16

Nominal Off-state Isolation:

93 dB

Nominal On-state Resistance Match:

10 ohm

Maximum On-state Resistance (Ron):

26 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Maximum Switch-off Time:

40 ns

Maximum Switch-on Time:

40 ns

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width (mm):

4.4 mm

Trade Compliance

NLAS4051SDTR2G Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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