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NLAS4051QSR

Onsemi

NLAS4051QSR by Onsemi

NLAS4051QSR by Onsemi is a CMOS single-ended multiplexer with 8 channels. It operates at temperatures from -55 to 125 °C and has a max supply voltage of 6.6 V. With a nominal off-state isolation of 93 dB, it is ideal for military-grade applications requiring precise signal switching in compact designs.

Median Price

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Lifecycle Status

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Vyrian

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AZTECH Wire

Italy . 50 parts In-Stock

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SupplyDigital Components

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Problanco Electronics

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TANS Electronics

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UHIMA Technologies

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Overview

Discover the NLAS4051QSR by Onsemi, a high-quality multiplexer & switch offering unmatched value and performance. Designed to meet the rigorous standards of military-grade applications, this innovative product boasts a compact design and cutting-edge CMOS technology. With 8 channels and fast switching times, the NLAS4051QSR delivers reliable performance in a wide range of electronic systems. Trust Onsemi's reputation for excellence and elevate your projects with this top-of-the-line solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the multiplexer, ensuring long-term reliability.

Nominal Supply Voltage (Vsup): 3 V

The nominal supply voltage of 3V makes this multiplexer compatible with a wide range of applications that require a standard voltage input.

No. of Channels: 8

With 8 channels, this multiplexer offers ample versatility for switching between multiple inputs or outputs, making it ideal for complex electronic systems.

Maximum On-state Resistance (Ron): 37 ohm

The low on-state resistance ensures minimal signal loss and distortion when the switch is engaged, providing high-quality signal transmission.

Technology: CMOS

The CMOS technology used in this multiplexer helps reduce power consumption and improve overall performance, making it an energy-efficient choice for electronic circuits.

Temperature Grade: MILITARY

The military-grade temperature range of -55 to 125 °C ensures reliable operation in harsh environments and critical applications where extreme temperatures are a factor.

Technical Specifications

Multiplexers & Switches NLAS4051QSR attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Additional Features:

ALSO OPERATE WITH 2.5 TO 5.5V SINGLE SUPPLY

Other IC type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e0

Length:

4.89 mm

Moisture Sensitivity Level (MSL):

1

Maximum Negative Supply Voltage (Vsup):

-5.5 V

Minimum Negative Supply Voltage (Vsup):

0 V

Nominal Negative Supply Voltage (Vsup):

-3 V

No. of Channels:

8

No. of Functions:

1

No. of Terminals:

16

Nominal Off-state Isolation:

93 dB

Nominal On-state Resistance Match:

15 ohm

Maximum On-state Resistance (Ron):

37 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Power Supplies (V):

-3,3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.73 mm

Maximum Signal Current:

.05 A

Sub-Category:

Multiplexer or Switches

Maximum Supply Current (Isup):

.08 mA

Maximum Supply Voltage (Vsup):

6.6 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Maximum Switch-off Time:

28 ns

Maximum Switch-on Time:

28 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.64 mm

Terminal Position:

DUAL

Width (mm):

3.9 mm

Trade Compliance

NLAS4051QSR Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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