Loading...

NILMS4501NR2

Onsemi

NILMS4501NR2 by Onsemi

NILMS4501NR2 by Onsemi is a N-CHANNEL FET for switching applications. Features include 24V DS breakdown voltage, 14A pulsed drain current, and 0.016 ohm max on-resistance. Ideal for enhancement mode operation with 175 °C max temp rating.

Median Price

$1.115

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4,943 parts In-Stock

1+ parts

-

100+ parts

$1.190

1k+ parts

$0.988

10k+ parts

$0.881

4,943

-

$1.190

$0.988

$0.881

Avnet

USA . 4,943 parts In-Stock

1+ parts

-

100+ parts

$1.040

1k+ parts

$0.950

10k+ parts

$0.900

4,943

-

$1.040

$0.950

$0.900

DigiKey

USA . 4,943 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.010

10k+ parts

$1.010

4,943

-

-

$1.010

$1.010

Verical

USA . 4,943 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.235

10k+ parts

$1.101

4,943

-

-

$1.235

$1.101

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 97 parts In-Stock

1+ parts

$0.926

100+ parts

-

1k+ parts

-

10k+ parts

-

97

$0.926

-

-

-

Vyrian

USA . 2,170 parts In-Stock

1+ parts

$0.975

100+ parts

-

1k+ parts

-

10k+ parts

-

2,170

$0.975

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 520 parts In-Stock

1+ parts

$0.878

100+ parts

-

1k+ parts

-

10k+ parts

-

520

$0.878

-

-

-

Corohmni

South Africa . 149 parts In-Stock

1+ parts

$0.975

100+ parts

-

1k+ parts

-

10k+ parts

-

149

$0.975

-

-

-

Component Stockers USA

USA . 6,142 parts In-Stock

1+ parts

$1.000

100+ parts

$0.940

1k+ parts

$0.850

10k+ parts

-

6,142

$1.000

$0.940

$0.850

-

Microchip USA

USA . 424 parts In-Stock

1+ parts

$6.110

100+ parts

-

1k+ parts

-

10k+ parts

-

424

$6.110

-

-

-

TANS Electronics

Latvia . 7,809 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,809

-

-

-

-

Kulean Microsystems

USA . 7,385 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,385

-

-

-

-

Authorized Procurement Solutions

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,000

-

-

-

-

Continental Prestige Electronics

USA . 4,943 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.894

10k+ parts

-

4,943

-

-

$0.894

-

SupplyDigital Components

Austria . 1,419 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,419

-

-

-

-

UHIMA Technologies

Türkiye . 779 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

779

-

-

-

-

Problanco Electronics

Mexico . 296 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

296

-

-

-

-

Overview

Enhance the performance of your electronic devices with the Onsemi NILMS4501NR2 Power Field Effect Transistor. Manufactured by industry leader Onsemi, this N-CHANNEL transistor offers unparalleled quality and reliability. Ideal for switching applications, this transistor features a current mirror with a built-in diode configuration, providing efficient power management. With a maximum pulsed drain current of 14 A and minimum DS breakdown voltage of 24 V, this transistor delivers superior performance. Upgrade your devices with the Onsemi NILMS4501NR2 FET for enhanced functionality and exceptional value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the transistor, making it reliable for long-term use.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better performance and lower resistance compared to P-channel transistors, making this product ideal for high-efficiency applications.

Configuration: CURRENT MIRROR WITH BUILT-IN DIODE

The current mirror configuration with a built-in diode allows for precise current control and efficient energy management in various switching applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor is optimized for fast and efficient switching operations, making it suitable for power management and control circuits.

Surface Mount: YES

Surface mount capability allows for easy and compact integration onto circuit boards, saving space and simplifying the assembly process.

Maximum Pulsed Drain Current (IDM): 14 A

The high pulsed drain current rating of 14 A ensures the transistor can handle short bursts of high current, making it suitable for applications with intermittent high power requirements.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175 °C, this transistor can operate reliably in high-temperature environments, increasing its versatility for various industrial applications.

Technical Specifications

Power Field Effect Transistors (FET) NILMS4501NR2 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

50 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

24 V

Maximum Drain Current (Abs) (ID):

9.5 A

Maximum Drain Current (ID):

9.5 A

Maximum Drain-Source On Resistance:

.016 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PBCC-N4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

14 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NILMS4501NR2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 1