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NCV5705BDR2G

Onsemi

NCV5705BDR2G by Onsemi

NCV5705BDR2G by Onsemi is a MOSFET gate driver with a max supply voltage of 20V and high side driver feature. It has a turn-on time of 0.075us, making it suitable for automotive applications requiring fast switching speeds. This rectangular package with gull wing terminals operates in temperatures ranging from -40 to 125°C, meeting AEC-Q100 standards.

Median Price

$2.400

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 400 parts In-Stock

1+ parts

$0.750

100+ parts

$0.705

1k+ parts

$0.637

10k+ parts

-

400

$0.750

$0.705

$0.637

-

Mouser Electronics

USA . 8,714 parts In-Stock

1+ parts

$2.400

100+ parts

$1.060

1k+ parts

$0.827

10k+ parts

$0.675

8,714

$2.400

$1.060

$0.827

$0.675

DigiKey

USA . 5,639 parts In-Stock

1+ parts

$2.400

100+ parts

$1.052

1k+ parts

$0.826

10k+ parts

$0.675

5,639

$2.400

$1.052

$0.826

$0.675

Chip1Stop

Japan . 100 parts In-Stock

1+ parts

$20.110

100+ parts

-

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-

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100

$20.110

-

-

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RS (Exports)

UK . 1,550 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.752

1,550

-

-

-

$0.752

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,990 parts In-Stock

1+ parts

$0.712

100+ parts

-

1k+ parts

-

10k+ parts

-

1,990

$0.712

-

-

-

Nova Conductors

Japan . 37 parts In-Stock

1+ parts

$0.858

100+ parts

-

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-

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37

$0.858

-

-

-

Flip Electronics

USA . 10,000 parts In-Stock

1+ parts

-

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10,000

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-

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Vyrian

USA . 405 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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405

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 626 parts In-Stock

1+ parts

$0.640

100+ parts

-

1k+ parts

-

10k+ parts

-

626

$0.640

-

-

-

Corphita

USA . 831 parts In-Stock

1+ parts

$0.675

100+ parts

-

1k+ parts

-

10k+ parts

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831

$0.675

-

-

-

Corohmni

South Africa . 278 parts In-Stock

1+ parts

$0.750

100+ parts

-

1k+ parts

-

10k+ parts

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278

$0.750

-

-

-

Argo Parts USA

USA . 1,844 parts In-Stock

1+ parts

$0.858

100+ parts

-

1k+ parts

-

10k+ parts

-

1,844

$0.858

-

-

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.858

100+ parts

-

1k+ parts

$0.815

10k+ parts

$0.798

1,000

$0.858

-

$0.815

$0.798

Vigor

Singapore . 209 parts In-Stock

1+ parts

$1.690

100+ parts

-

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-

10k+ parts

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209

$1.690

-

-

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SupplyDigital Components

Austria . 6,384 parts In-Stock

1+ parts

-

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6,384

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Problanco Electronics

Mexico . 2,820 parts In-Stock

1+ parts

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2,820

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TANS Electronics

Latvia . 657 parts In-Stock

1+ parts

-

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657

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UHIMA Technologies

Türkiye . 435 parts In-Stock

1+ parts

-

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435

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Kulean Microsystems

USA . 349 parts In-Stock

1+ parts

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349

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Continental Prestige Electronics

USA . 140 parts In-Stock

1+ parts

-

100+ parts

$1.060

1k+ parts

$0.720

10k+ parts

-

140

-

$1.060

$0.720

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Authorized Procurement Solutions

USA . 100 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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100

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Overview

Unlock the potential of your automotive applications with the NCV5705BDR2G MOSFET Gate Driver by Onsemi. Designed with precision and reliability in mind, this small outline package delivers seamless performance in high side driver applications. With a wide operating temperature range and AEC-Q100 screening level, this gate driver ensures quality and durability. Trust Onsemi's expertise in semiconductor manufacturing to enhance the efficiency and effectiveness of your automotive systems. Elevate your projects with the value and benefits that the NCV5705BDR2G brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability for the product, making it suitable for various applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving space and making assembly processes more streamlined.

Maximum Supply Voltage: 20 V

With a high maximum supply voltage, this gate driver can support a wide range of power requirements and applications.

Screening Level: AEC-Q100

AEC-Q100 screening ensures that the product meets stringent automotive quality standards, making it reliable for automotive applications.

No. of Terminals: 8

Having 8 terminals allows for easy connectivity and integration into circuit designs, providing flexibility in system configurations.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures the gate driver can withstand harsh environmental conditions, increasing its longevity and reliability.

Terminal Position: DUAL

Dual terminal positions provide additional flexibility in circuit designs, allowing for different connectivity options to suit specific application requirements.

Nominal Output Peak Current Limit: 6 A

With a high nominal output peak current limit, this gate driver can handle high-power applications with ease, providing efficient and reliable performance.

Technical Specifications

MOSFET Gate Drivers NCV5705BDR2G attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G8

Length:

5 mm

Nominal Negative Supply Voltage:

-10 V

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Maximum Supply Current:

1.5 mA

Maximum Supply Voltage:

20 V

Nominal Supply Voltage:

15 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.075 us

Turn-on Time:

.075 us

Width:

4 mm

Trade Compliance

NCV5705BDR2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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