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NCV51511PDR2G

Onsemi

NCV51511PDR2G by Onsemi

NCV51511PDR2G by Onsemi is a MOSFET gate driver with a supply voltage range of 8-16V, AEC-Q100 screening, and built-in protections for undervoltage and transients. It is designed for automotive applications, featuring a small outline package style with heat sink, high side driver capability, and fast turn-on/off times of 0.047us/0.045us.

Median Price

$2.378

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 4,035 parts In-Stock

1+ parts

$3.120

100+ parts

$1.927

1k+ parts

$1.794

10k+ parts

-

4,035

$3.120

$1.927

$1.794

-

Mouser Electronics

USA . 3,936 parts In-Stock

1+ parts

$3.120

100+ parts

$1.930

1k+ parts

$1.640

10k+ parts

$1.530

3,936

$3.120

$1.930

$1.640

$1.530

Flip Electronics (Authorized)

USA . 7,500 parts In-Stock

1+ parts

-

100+ parts

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7,500

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Rochester

USA . 280 parts In-Stock

1+ parts

-

100+ parts

$1.460

1k+ parts

$1.310

10k+ parts

$1.230

280

-

$1.460

$1.310

$1.230

Verical

USA . 280 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.637

10k+ parts

$1.538

280

-

-

$1.637

$1.538

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 554 parts In-Stock

1+ parts

$1.548

100+ parts

-

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554

$1.548

-

-

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Vyrian

USA . 1,036 parts In-Stock

1+ parts

$1.630

100+ parts

-

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-

10k+ parts

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1,036

$1.630

-

-

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Flip Electronics

USA . 7,500 parts In-Stock

1+ parts

-

100+ parts

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7,500

-

-

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Chip Stock

USA . 4,800 parts In-Stock

1+ parts

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4,800

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 3,330 parts In-Stock

1+ parts

$1.390

100+ parts

-

1k+ parts

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3,330

$1.390

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Corphita

USA . 1,888 parts In-Stock

1+ parts

$1.467

100+ parts

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1,888

$1.467

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Corohmni

South Africa . 456 parts In-Stock

1+ parts

$1.630

100+ parts

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456

$1.630

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Vigor

Singapore . 225 parts In-Stock

1+ parts

$1.760

100+ parts

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225

$1.760

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Microchip USA

USA . 4,177 parts In-Stock

1+ parts

$10.744

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4,177

$10.744

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RC Electronics

USA . 38,118 parts In-Stock

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38,118

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Lixinc

USA . 12,864 parts In-Stock

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12,864

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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6,000

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Kulean Microsystems

USA . 5,473 parts In-Stock

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5,473

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Argo Parts USA

USA . 4,439 parts In-Stock

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4,439

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Problanco Electronics

Mexico . 2,052 parts In-Stock

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2,052

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TANS Electronics

Latvia . 1,883 parts In-Stock

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1,883

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Continental Prestige Electronics

USA . 1,226 parts In-Stock

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1,226

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SupplyDigital Components

Austria . 385 parts In-Stock

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385

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UHIMA Technologies

Türkiye . 163 parts In-Stock

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163

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Experience the superior quality and reliability of Onsemi with the NCV51511PDR2G MOSFET Gate Driver. Designed for automotive applications, this small outline driver offers under voltage and transient protections for added peace of mind. With a wide operating temperature range and built-in safeguards, this driver ensures optimal performance in any condition. Trust Onsemi to deliver exceptional value and unmatched benefits with the NCV51511PDR2G, providing customers with a reliable solution for their gate driver needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the gate driver, ensuring a longer lifespan.

Surface Mount: YES

Being surface mountable makes installation easier and more efficient, especially in compact designs where space is limited.

Maximum Supply Voltage: 16 V

The high maximum supply voltage allows for flexibility in different circuit applications.

Screening Level: AEC-Q100

This automotive-grade screening level ensures reliability and performance in harsh operating conditions, making it suitable for automotive applications.

Built-in Protections: UNDER VOLTAGE; TRANSIENT

These built-in protections safeguard the gate driver and connected components from potential damage due to voltage fluctuations or transients.

No. of Terminals: 8

Having multiple terminals allows for easy connection to different components within the circuit.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures the gate driver can perform reliably even in elevated temperature environments.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows for operation in cold environments without compromising performance.

Terminal Finish: NICKEL GOLD PALLADIUM

This finish provides corrosion resistance and ensures good electrical connections for long-lasting performance.

Maximum Time At Peak Reflow Temperature (s): 30

This short reflow time helps prevent heat damage to the gate driver during the assembly process.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures proper soldering and secure attachment to the PCB during assembly.

Temperature Grade: AUTOMOTIVE

The automotive-grade temperature rating ensures reliable operation in automotive applications where temperature fluctuations are common.

Maximum Supply Current: 0.3 mA

The low maximum supply current helps in reducing power consumption and heat generation, making the gate driver energy-efficient.

Nominal Supply Voltage: 12 V

The nominal supply voltage provides a standard operating voltage for various applications, ensuring compatibility.

Turn-on Time: 0.047 us

The fast turn-on time ensures quick response and efficient switching of the MOSFETs, enhancing overall performance.

Terminal Pitch: 1.27 mm

The small terminal pitch allows for a compact design and easy PCB layout, saving space in the circuit.

Moisture Sensitivity Level (MSL): 2

The low moisture sensitivity level indicates that the gate driver is less prone to moisture-related damage during storage or operation.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

This type of interface IC allows for efficient control and driving of MOSFETs in half-bridge configurations, suitable for various power electronics applications.

Turn-off Time: 0.045 us

The fast turn-off time ensures quick response and efficient switching off of the MOSFETs, reducing power losses and improving performance.

Output Current Flow Direction: SOURCE AND SINK

The ability to handle both source and sink current flow allows for versatile operation and control of the connected MOSFETs in the circuit.

Technical Specifications

MOSFET Gate Drivers NCV51511PDR2G attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

Built-in Protections:

UNDER VOLTAGE; TRANSIENT

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

R-PDSO-G8

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Output Current Flow Direction:

SOURCE AND SINK

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Maximum Supply Current:

.3 mA

Maximum Supply Voltage:

16 V

Minimum Supply Voltage:

8 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL GOLD PALLADIUM

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.045 us

Turn-on Time:

.047 us

Width:

3.9 mm

Trade Compliance

NCV51511PDR2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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