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NCV51705MNTWG

Onsemi

NCV51705MNTWG by Onsemi

NCV51705MNTWG by Onsemi is a MOSFET gate driver with a max supply voltage of 22V and AEC-Q100 screening. It operates in automotive applications, featuring a high side driver, turn-on/off time of 0.05us, and nominal output peak current limit of 6A.

Median Price

$2.744

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 4,866 parts In-Stock

1+ parts

$3.980

100+ parts

$2.497

1k+ parts

$2.354

10k+ parts

-

4,866

$3.980

$2.497

$2.354

-

Verical

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$1.800

9,000

-

-

-

$1.800

RS (Exports)

UK . 5,950 parts In-Stock

1+ parts

-

100+ parts

$2.744

1k+ parts

$1.980

10k+ parts

-

5,950

-

$2.744

$1.980

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$2.291

100+ parts

-

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500

$2.291

-

-

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Digiode

USA . 1,758 parts In-Stock

1+ parts

$3.904

100+ parts

-

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1,758

$3.904

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Chip Stock

USA . 22,000 parts In-Stock

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22,000

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Vyrian

USA . 7,282 parts In-Stock

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7,282

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 6,955 parts In-Stock

1+ parts

$1.530

100+ parts

-

1k+ parts

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6,955

$1.530

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Corohmni

South Africa . 234 parts In-Stock

1+ parts

$1.800

100+ parts

-

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234

$1.800

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Argo Parts USA

USA . 1,249 parts In-Stock

1+ parts

$2.280

100+ parts

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1,249

$2.280

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Corphita

USA . 891 parts In-Stock

1+ parts

$3.699

100+ parts

-

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891

$3.699

-

-

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$16.929

100+ parts

$15.405

1k+ parts

$13.882

10k+ parts

-

2,000

$16.929

$15.405

$13.882

-

RC Electronics

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

$2.330

1k+ parts

$2.130

10k+ parts

$2.060

12,000

-

$2.330

$2.130

$2.060

Lixinc

USA . 10,229 parts In-Stock

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10,229

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Perfect Parts

USA . 9,881 parts In-Stock

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9,881

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Kulean Microsystems

USA . 8,276 parts In-Stock

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8,276

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Kepictronics

USA . 7,513 parts In-Stock

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7,513

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SupplyDigital Components

Austria . 3,726 parts In-Stock

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3,726

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Problanco Electronics

Mexico . 3,596 parts In-Stock

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3,596

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$2.245

1k+ parts

$2.177

10k+ parts

$2.131

1,000

-

$2.245

$2.177

$2.131

UHIMA Technologies

Türkiye . 917 parts In-Stock

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917

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TANS Electronics

Latvia . 153 parts In-Stock

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153

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Overview

Unlock the power of efficient and reliable MOSFET gate drivers with the NCV51705MNTWG by Onsemi. Designed for automotive applications, this high-quality product offers superior performance and durability. With a wide operating temperature range and AEC-Q100 screening level, it ensures optimal functionality in challenging environments. Say goodbye to concerns about supply voltage and temperature fluctuations, as this chip carrier package guarantees stable operation. Trust Onsemi's expertise in semiconductor manufacturing to deliver a cutting-edge solution that enhances the efficiency of your systems. Elevate your projects with the NCV51705MNTWG and experience seamless integration and improved performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material for package body provides good durability and resistance against environmental factors, making this product suitable for long-term usage in various conditions.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on circuit boards, saving space and reducing assembly time.

Maximum Supply Voltage: 22 V

With a high maximum supply voltage of 22 V, this gate driver can handle a wide range of input voltages, providing flexibility in circuit design.

Screening Level: AEC-Q100

AEC-Q100 screening ensures that this gate driver meets automotive industry standards for reliability and performance, making it a suitable choice for automotive applications.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this gate driver can operate efficiently in harsh and cold environments, enhancing its versatility.

Maximum Seated Height: 0.9 mm

The low maximum seated height of 0.9 mm allows for a compact overall design, particularly beneficial in space-constrained applications.

High Side Driver: YES

The presence of a high side driver allows for efficient and reliable control of high-side MOSFETs, enabling effective power management in the circuit.

Input Characteristics: SCHMITT TRIGGER

The Schmitt trigger input characteristics ensure robust and noise-immune signal processing, enhancing the reliability and stability of the gate driver.

Nominal Output Peak Current Limit: 6 A

The high nominal output peak current limit of 6 A enables the gate driver to drive power MOSFETs effectively, ensuring efficient power delivery in the circuit.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

The buffer or inverter based interface IC type offers flexibility in driving MOSFETs, allowing for optimized performance based on specific circuit requirements.

Technical Specifications

MOSFET Gate Drivers NCV51705MNTWG attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

Additional Features:

UNDERVOLTAGE LOCKOUT

High Side Driver:

YES

Input Characteristics:

SCHMITT TRIGGER

JESD-30 Code:

S-PQCC-N24

JESD-609 Code:

e3

Length:

4 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

24

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC24,.16SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

.9 mm

Maximum Supply Current:

18 mA

Maximum Supply Voltage:

22 V

Minimum Supply Voltage:

10 V

Nominal Supply Voltage:

20 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.05 us

Turn-on Time:

.05 us

Width:

4 mm

Trade Compliance

NCV51705MNTWG Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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