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NCS212MUTAG

Onsemi

NCS212MUTAG by Onsemi

NCS212MUTAG by Onsemi is a Power Management IC with 10 terminals, suitable for automotive applications. It operates b/w -40 to 125 °C and supports supply voltages from 2.7V to 26V. This chip carrier has a very thin profile, making it ideal for surface mount installations.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 813 parts In-Stock

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Vyrian

USA . 244 parts In-Stock

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SupplyDigital Components

Austria . 6,129 parts In-Stock

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TANS Electronics

Latvia . 5,846 parts In-Stock

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Kulean Microsystems

USA . 4,833 parts In-Stock

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Problanco Electronics

Mexico . 3,908 parts In-Stock

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Corphita

USA . 945 parts In-Stock

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Corohmni

South Africa . 348 parts In-Stock

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UHIMA Technologies

Türkiye . 329 parts In-Stock

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Overview

Discover the power of efficient and reliable power management with the NCS212MUTAG by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and performance in their products. This Power Management IC is designed for a wide range of applications, making it versatile and practical for various uses. Experience the value and benefits that this product offers, from its surface mount capability to its automotive-grade temperature grade. Trust Onsemi to provide the innovation and excellence you need in power supply support circuits.

Feature Benefit Bullets

Surface Mount: YES

This allows for easy and convenient installation on circuit boards, saving time and effort in the assembly process.

Nominal Supply Voltage (Vsup): 5 V

Compatibility with a common supply voltage makes this product suitable for a wide range of applications.

No. of Terminals: 10

Having a sufficient number of terminals allows for versatile connectivity options and integration with other components.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand demanding environmental conditions and provide reliable performance.

Minimum Operating Temperature: -40 °C

The wide temperature range allows for operation in both extreme cold and hot conditions, increasing the product's versatility.

Width (mm): 1.4 mm

The compact width enables efficient use of space on the circuit board, especially in applications where size is limited.

Minimum Supply Voltage (Vsup): 2.7 V

The low minimum supply voltage allows for operation in low-power scenarios, improving energy efficiency.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this product meets specific industry standards and requirements for reliable performance in vehicles.

No. of Channels: 2

Having multiple channels allows for simultaneous power management of different components or devices, increasing the product's functionality.

Maximum Supply Voltage (Vsup): 26 V

The high maximum supply voltage capability ensures compatibility with a wide range of power sources, making the product versatile in various applications.

Technical Specifications

Power Management ICs NCS212MUTAG attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-XQCC-N10

Length:

1.8 mm

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

10

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

.6 mm

Maximum Supply Voltage (Vsup):

26 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.4 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

1.4 mm

Trade Compliance

NCS212MUTAG Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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