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NCS213SQT2G

Onsemi

NCS213SQT2G by Onsemi

NCS213SQT2G by Onsemi is a Power Management IC with 6 terminals, operating voltage range of 2.7V to 26V, and temp grade for automotive applications. It features a small outline package style, tin terminal finish, and can withstand temperatures from -40 °C to 125°C. Ideal for power supply support circuits in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,430 parts In-Stock

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Digiode

USA . 1,440 parts In-Stock

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AZTECH Wire

Italy . 76 parts In-Stock

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$17.930

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TANS Electronics

Latvia . 4,323 parts In-Stock

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Problanco Electronics

Mexico . 4,216 parts In-Stock

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Kulean Microsystems

USA . 4,169 parts In-Stock

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Corphita

USA . 1,975 parts In-Stock

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SupplyDigital Components

Austria . 1,080 parts In-Stock

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Vigor

Singapore . 810 parts In-Stock

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UHIMA Technologies

Türkiye . 528 parts In-Stock

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Microchip USA

USA . 334 parts In-Stock

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Corohmni

South Africa . 214 parts In-Stock

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Overview

Experience superior power management with the NCS213SQT2G by Onsemi. Crafted from high-quality materials, this compact Power Management IC offers unparalleled efficiency and reliability. Ideal for automotive applications, this innovative product ensures optimal performance in a wide range of operating temperatures. With its advanced features and robust design, the NCS213SQT2G provides exceptional value and benefits to customers seeking a dependable solution for their power supply support circuit needs. Choose Onsemi for quality you can trust.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and reliability for long-term use.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards.

Nominal Supply Voltage (Vsup): 5 V

Suitable for a wide range of applications requiring a 5V power supply.

Maximum Operating Temperature: 125 °C

Capable of operating at high temperatures, making it suitable for various environments.

Width (mm): 1.25 mm

Compact size enables space-saving designs in electronic devices.

Temperature Grade: AUTOMOTIVE

Designed to meet automotive industry standards and requirements.

Maximum Supply Voltage (Vsup): 26 V

Capable of handling higher supply voltages for versatile applications.

Technical Specifications

Power Management ICs NCS213SQT2G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Length:

2 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

26 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.25 mm

Trade Compliance

NCS213SQT2G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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