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NCS213MUTAG

Onsemi

NCS213MUTAG by Onsemi

NCS213MUTAG by Onsemi is a Power Management IC with 2 channels, suitable for automotive applications. It operates b/w -40 to 125 °C and supports supply voltage from 2.7V to 26V. This surface-mount chip carrier has a very thin profile, making it ideal for compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,315 parts In-Stock

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Digiode

USA . 980 parts In-Stock

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980

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Kulean Microsystems

USA . 7,496 parts In-Stock

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7,496

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Problanco Electronics

Mexico . 5,421 parts In-Stock

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5,421

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TANS Electronics

Latvia . 3,097 parts In-Stock

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3,097

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SupplyDigital Components

Austria . 2,018 parts In-Stock

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2,018

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Corphita

USA . 1,427 parts In-Stock

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1,427

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UHIMA Technologies

Türkiye . 852 parts In-Stock

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852

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Corohmni

South Africa . 256 parts In-Stock

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Overview

Enhance your power management with the NCS213MUTAG by Onsemi, a top-tier manufacturer known for quality and reliability. This Power Management IC is perfect for automotive applications, offering a wide operating temperature range, space-saving chip carrier package, and support for up to 2 channels. With a nominal supply voltage of 5V and maximum seated height of just 0.6mm, this product provides exceptional value and performance for all your power supply needs. Experience the advantages of efficiency and precision with the NCS213MUTAG today!

Feature Benefit Bullets

Surface Mount: YES

Being surface mount compatible makes this product suitable for automated assembly processes, saving time and effort during production.

Nominal Supply Voltage (Vsup): 5 V

With a nominal supply voltage of 5V, this product is compatible with a wide range of electrical systems, making it versatile and widely applicable.

Package Style: CHIP CARRIER, VERY THIN PROFILE

The chip carrier with a very thin profile allows for compact and space-saving designs, ideal for applications where size and weight are critical factors.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C ensures reliable performance even in harsh environmental conditions, making it suitable for a variety of applications.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this product can operate in cold environments without any issues, increasing its reliability and usability.

No. of Channels: 2

Having two channels allows for more flexibility and control in power management, accommodating multiple power sources or loads effectively.

Technical Specifications

Power Management ICs NCS213MUTAG attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-XQCC-N10

Length:

1.8 mm

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

10

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

.6 mm

Maximum Supply Voltage (Vsup):

26 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.4 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

1.4 mm

Trade Compliance

NCS213MUTAG Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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