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NCS212SQT2G

Onsemi

NCS212SQT2G by Onsemi

NCS212SQT2G by Onsemi is a Power Management IC with 6 terminals, operating voltage range of 2.7V to 26V, and temp grade for automotive applications. It features a small outline package style, tin terminal finish, and can withstand temperatures from -40 °C to 125°C. Ideal for power supply support circuits in automotive electronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,938 parts In-Stock

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Digiode

USA . 730 parts In-Stock

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730

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SupplyDigital Components

Austria . 8,165 parts In-Stock

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Kulean Microsystems

USA . 5,562 parts In-Stock

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TANS Electronics

Latvia . 5,310 parts In-Stock

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Problanco Electronics

Mexico . 3,285 parts In-Stock

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Corphita

USA . 960 parts In-Stock

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UHIMA Technologies

Türkiye . 776 parts In-Stock

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Corohmni

South Africa . 460 parts In-Stock

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Overview

Looking for reliable power management solutions? Look no further than the NCS212SQT2G by Onsemi. With a reputation for high-quality products, Onsemi delivers exceptional performance in the Power Management ICs category. This versatile IC is perfect for a wide range of applications, providing customers with the value and benefits they need. Trust Onsemi to provide you with top-of-the-line power supply support circuits that will exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good mechanical strength and durability to the product.

Surface Mount: YES

Being surface mountable makes it easy to integrate into circuit boards, saving space and increasing efficiency.

Nominal Supply Voltage (Vsup): 12 V

Suitable voltage for various power management applications, providing flexibility in usage.

Maximum Operating Temperature: 125 °C

Can operate efficiently in a wide range of temperatures, making it suitable for different environments.

Minimum Operating Temperature: -40 °C

Ability to operate in low temperatures makes it reliable in extreme conditions.

Terminal Finish: TIN

Tin finish provides good electrical conductivity and corrosion resistance, ensuring stable performance over time.

Minimum Supply Voltage (Vsup): 2.7 V

Low minimum supply voltage allows for operation in systems with lower power requirements.

Temperature Grade: AUTOMOTIVE

Designed to meet automotive industry standards, ensuring reliability and compatibility in automotive applications.

Technical Specifications

Power Management ICs NCS212SQT2G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Length:

2 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

26 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.25 mm

Trade Compliance

NCS212SQT2G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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