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NCS210MUTAG

Onsemi

NCS210MUTAG by Onsemi

NCS210MUTAG by Onsemi is a Power Management IC with 10 terminals, operating voltage range of 2.7V to 26V, and temperature grade suitable for automotive applications. It features a very thin profile chip carrier package, rectangular shape, and quad terminal position. Ideal for power supply support circuits in automotive electronics due to its compact size and wide voltage range compatibility.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,107 parts In-Stock

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Digiode

USA . 505 parts In-Stock

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505

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SupplyDigital Components

Austria . 8,287 parts In-Stock

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8,287

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Problanco Electronics

Mexico . 7,925 parts In-Stock

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Corphita

USA . 1,506 parts In-Stock

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TANS Electronics

Latvia . 1,465 parts In-Stock

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UHIMA Technologies

Türkiye . 792 parts In-Stock

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Kulean Microsystems

USA . 427 parts In-Stock

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Corohmni

South Africa . 340 parts In-Stock

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Overview

Enhance your power management solutions with the NCS210MUTAG from Onsemi. With a compact rectangular chip carrier package and a wide operating temperature range, this power supply support circuit is designed to meet the demands of automotive applications. Trust in the quality and expertise of Onsemi to deliver reliable and efficient power management ICs that provide optimal performance. Invest in the NCS210MUTAG for seamless integration, superior functionality, and lasting value.

Feature Benefit Bullets

Surface Mount: YES

Surface mount packaging allows for easy and convenient installation on PCBs, saving space and reducing assembly time.

Nominal Supply Voltage (Vsup): 5 V

Operates at a common voltage level, making it compatible with many power sources and devices.

Package Style (Meter): CHIP CARRIER, VERY THIN PROFILE

The thin profile chip carrier package saves space and is suitable for compact electronic devices.

Maximum Operating Temperature: 125 °C

Can operate at high temperatures without compromising performance or stability, ideal for demanding applications.

Minimum Operating Temperature: -40 °C

Can operate in extremely cold environments, ensuring reliability in a wide range of conditions.

Package Shape: RECTANGULAR

Rectangular shape facilitates efficient design and layout on PCBs, contributing to overall system compactness.

Maximum Seated Height: 0.6 mm

Low profile design allows for compact installations, especially in height-restricted spaces.

Terminal Pitch: 0.4 mm

Close terminal pitch provides high-density integration and allows for more compact PCB designs.

Temperature Grade: AUTOMOTIVE

Designed to meet automotive industry standards for temperature range and reliability, ensuring suitability for automotive applications.

Technical Specifications

Power Management ICs NCS210MUTAG attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-XQCC-N10

Length:

1.8 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

10

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

.6 mm

Maximum Supply Voltage (Vsup):

26 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.4 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

1.4 mm

Trade Compliance

NCS210MUTAG Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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