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NCP4686DSN12T1G

Onsemi

NCP4686DSN12T1G by Onsemi

NCP4686DSN12T1G by Onsemi is a Fixed Positive Single Output LDO Regulator with 0.38V dropout voltage, 1.2V nominal output, and 0.4A max output current. Ideal for applications requiring stable voltage regulation in compact spaces due to its small outline package style and low profile design.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 6,731 parts In-Stock

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Digiode

USA . 528 parts In-Stock

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AZTECH Wire

Italy . 734 parts In-Stock

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$8.100

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Component Stockers USA

USA . 792 parts In-Stock

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$99.990

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Problanco Electronics

Mexico . 8,145 parts In-Stock

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TANS Electronics

Latvia . 4,022 parts In-Stock

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SupplyDigital Components

Austria . 1,413 parts In-Stock

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UHIMA Technologies

Türkiye . 707 parts In-Stock

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Microchip USA

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Corphita

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Vigor

Singapore . 228 parts In-Stock

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Corohmni

South Africa . 216 parts In-Stock

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Kulean Microsystems

USA . 86 parts In-Stock

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Overview

Discover the power of reliable performance with the NCP4686DSN12T1G by Onsemi, a leading manufacturer in the industry. This fixed positive single output LDO regulator offers superior quality and efficiency for a wide range of applications. With precise voltage regulation and a compact design, this product ensures stable operation and optimal performance. Trust Onsemi to deliver cutting-edge technology that meets your needs, providing value and benefits that exceed expectations. Elevate your projects with the NCP4686DSN12T1G and experience the difference in quality and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and cost-effective, making the product easy to handle and affordable.

Maximum Dropout Voltage: 1.38 V

Provides stable output voltage even when the input voltage fluctuates, ensuring reliable performance.

Surface Mount: YES

Enables easy and efficient integration onto PCBs, saving space and simplifying assembly.

Operating Temperature (TJ-Max): 150 °C

Can operate reliably in high-temperature environments, making it suitable for a wide range of applications.

Technology: CMOS

Low power consumption and fast response times, ideal for battery-powered devices and applications requiring quick voltage regulation.

Package Shape: RECTANGULAR

Streamlined design for efficient PCB layout and integration.

Terminal Form: GULL WING

Facilitates easy soldering onto PCBs, ensuring a secure and reliable connection.

Operating Temperature (TJ-Min): -40 °C

Can operate in harsh cold environments, providing versatility in temperature range.

Nominal Output Voltage: 1.2 V

Stable and precise output voltage, suitable for powering sensitive electronic components.

Adjustability: FIXED

Simplifies design and eliminates the need for external adjustments or calibration.

Technical Specifications

Fixed Regulators - Positive Single Output LDO NCP4686DSN12T1G attributes and parameters. Explore more Fixed Regulators - Positive Single Output LDO devices from Onsemi

Specs

Adjustability:

FIXED

Maximum Dropout Voltage-1:

.38 V

Nominal Dropout Voltage-1:

.28 V

Maximum Input Voltage Absolute:

4 V

Maximum Input Voltage:

3.6 V

Minimum Input Voltage:

1 V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2.9 mm

Maximum Line Regulation:

.0057 %

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

5

Operating Temperature (TJ-Max):

150 Cel

Operating Temperature (TJ-Min):

-40 Cel

Maximum Output Current-1:

.4 A

Maximum Output Voltage-1:

1.2204 V

Minimum Output Voltage-1:

1.1796 V

Nominal Output Voltage-1:

1.2 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Qualification Status:

Not Qualified

Maximum Seated Height:

1.45 mm

Sub-Category:

Other Regulators

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

Width:

1.65 mm

Trade Compliance

NCP4686DSN12T1G Regulators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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