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NCP361XSNXXT1G

Onsemi

NCP361XSNXXT1G by Onsemi

NCP361XSNXXT1G by Onsemi is a 5-terminal peripheral driver with built-in transient, over current, and thermal protections. It operates b/w -40 to 85 °C with a supply voltage range of 1.2V to 20V. Ideal for industrial applications requiring source output current flow direction in a compact rectangular package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 495 parts In-Stock

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495

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Digiode

USA . 237 parts In-Stock

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TANS Electronics

Latvia . 6,290 parts In-Stock

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Corphita

USA . 2,347 parts In-Stock

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Kulean Microsystems

USA . 1,249 parts In-Stock

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SupplyDigital Components

Austria . 1,101 parts In-Stock

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Problanco Electronics

Mexico . 399 parts In-Stock

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UHIMA Technologies

Türkiye . 345 parts In-Stock

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Corohmni

South Africa . 131 parts In-Stock

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Overview

Unlock the full potential of your electronics with the NCP361XSNXXT1G by Onsemi! As a leader in peripheral drivers, Onsemi delivers top-quality products that offer superior performance, reliability, and efficiency. This versatile device is perfect for a wide range of applications, providing built-in protections against transient events, overcurrent, and thermal issues. With a compact design and a wide operating temperature range, this product is a must-have for any project requiring a buffer or inverter based peripheral driver. Trust Onsemi to deliver the value and quality you need to take your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection to the internal components of the peripheral driver.

Surface Mount: YES

Being surface mountable makes the peripheral driver easy to install onto circuit boards, saving space and reducing assembly time.

Maximum Supply Voltage: 20 V

With a maximum supply voltage of 20V, this peripheral driver can safely operate with a wide range of power sources, making it versatile for various applications.

Built-in Protections: TRANSIENT; OVER CURRENT; THERMAL

The presence of built-in protections ensures the safety and reliability of the peripheral driver by safeguarding it against transient surges, overcurrent conditions, and excessive heat.

No. of Terminals: 5

Having 5 terminals allows for easy connections and integration into existing circuitry, simplifying the design and installation process.

Package Style: SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline, thin profile, and shrink pitch package style make this peripheral driver compact and space-efficient, suitable for applications where size is a constraint.

Minimum Supply Voltage: 1.2 V

With a minimum supply voltage of 1.2V, this peripheral driver can operate efficiently even with lower power sources, ensuring flexibility in power requirements.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C allows the peripheral driver to withstand elevated temperatures in industrial environments, ensuring reliable performance under harsh conditions.

Width: 1.5 mm

The narrow width of 1.5mm enables the peripheral driver to be seamlessly integrated into compact electronic devices or tight spaces, enhancing versatility in design.

Length: 3 mm

The short length of 3mm contributes to the overall compactness of the peripheral driver, making it suitable for applications where space-saving is essential.

Technical Specifications

Peripheral Drivers NCP361XSNXXT1G attributes and parameters. Explore more Peripheral Drivers devices from Onsemi

Specs

Built-in Protections:

TRANSIENT; OVER CURRENT; THERMAL

JESD-30 Code:

R-PDSO-G5

Length:

3 mm

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Current Flow Direction:

SOURCE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage:

20 V

Minimum Supply Voltage:

1.2 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.5 mm

Trade Compliance

NCP361XSNXXT1G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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