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NCN6001DTBR2

Onsemi

NCN6001DTBR2 by Onsemi

The Onsemi NCN6001DTBR2 is a small outline interface IC with 20 terminals, operating b/w -25 to 85 °C. It has a supply voltage range of 2.7V to 5.5V and terminal finish of NiPdAu, suitable for various applications requiring an interface circuit in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 46,000 parts In-Stock

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Vyrian

USA . 10,825 parts In-Stock

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Digiode

USA . 1,627 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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AZTECH Wire

Italy . 421 parts In-Stock

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$17.426

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421

$17.426

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Ampacity Inc.

Singapore . 1,325 parts In-Stock

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$19.500

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Lixinc

USA . 7,434 parts In-Stock

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SupplyDigital Components

Austria . 6,799 parts In-Stock

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Problanco Electronics

Mexico . 6,460 parts In-Stock

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TANS Electronics

Latvia . 4,579 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Kulean Microsystems

USA . 2,087 parts In-Stock

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Kepictronics

USA . 1,658 parts In-Stock

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Microchip USA

USA . 1,522 parts In-Stock

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UHIMA Technologies

Türkiye . 701 parts In-Stock

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Corphita

USA . 539 parts In-Stock

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Corohmni

South Africa . 401 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Enhance your electronic designs with the NCN6001DTBR2 by Onsemi, a high-quality Interface IC that offers impeccable performance and reliability. Manufactured by Onsemi, a leader in the industry, this product guarantees superior functionality and durability. Ideal for various applications in the category of Other Function Interface ICs, this product stands out for its value and benefits it brings to customers. Experience seamless integration and enhanced efficiency with the NCN6001DTBR2, making it an essential component for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material is durable and lightweight, making the product suitable for various applications.

Surface Mount: YES

Surface mount capability allows for easy installation and integration into electronic circuit boards.

Maximum Supply Voltage: 5.5 V

The high maximum supply voltage range provides flexibility in power source compatibility.

Package Shape: RECTANGULAR

Rectangular shape helps in efficient layout and space utilization on the circuit board.

Terminal Finish: NICKEL PALLADIUM GOLD

Nickel palladium gold finish ensures good conductivity and corrosion resistance for long-term reliability.

Minimum Operating Temperature: -25 °C

Wide temperature range allows the product to operate in various environmental conditions.

Width: 4.4 mm

Compact width enables the product to be used in space-constrained applications.

Nominal Supply Voltage: 3 V

Stable nominal supply voltage ensures consistent performance of the product.

Technical Specifications

Other Function Interface ICs NCN6001DTBR2 attributes and parameters. Explore more Other Function Interface ICs devices from Onsemi

Specs

Interface IC Type:

JESD-30 Code:

R-PDSO-G20

JESD-609 Code:

e4

Length:

6.5 mm

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

2.7 V

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

4.4 mm

Trade Compliance

NCN6001DTBR2 Interface ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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