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NCN4555MNR2

Onsemi

NCN4555MNR2 by Onsemi

NCN4555MNR2 by Onsemi is a Power Management IC with 16 terminals in a square chip carrier package. It operates b/w -25 to 85 °C, supporting supply voltages from 1.8V to 5.5V. Ideal for power supply circuits due to its compact size and low profile design.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 3,383 parts In-Stock

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Digiode

USA . 442 parts In-Stock

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AZTECH Wire

Italy . 416 parts In-Stock

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$10.710

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Component Stockers USA

USA . 458 parts In-Stock

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$99.990

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SupplyDigital Components

Austria . 8,037 parts In-Stock

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Kulean Microsystems

USA . 6,317 parts In-Stock

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TANS Electronics

Latvia . 4,320 parts In-Stock

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Problanco Electronics

Mexico . 3,276 parts In-Stock

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Corphita

USA . 819 parts In-Stock

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UHIMA Technologies

Türkiye . 295 parts In-Stock

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Microchip USA

USA . 281 parts In-Stock

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Corohmni

South Africa . 131 parts In-Stock

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Overview

Enhance your power management solutions with the NCN4555MNR2 by Onsemi. Known for their high-quality products, Onsemi delivers reliable and efficient Power Management ICs that are perfect for a wide range of applications. With its surface mount design and compact square package shape, this chip carrier offers 16 terminals for easy installation. From power supply support circuits to various other applications, this product ensures optimal performance with a minimum operating temperature of -25 °C and maximum operating temperature of 85°C. Trust Onsemi to provide you with the value, benefits, and advantages you need for your power management needs.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and effort during production.

Package Shape: SQUARE

Square package shape can provide better thermal dissipation and improved stability compared to other shapes.

No. of Terminals: 16

Provides multiple connectivity options and features for enhanced functionality and versatility.

Package Style: CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Combination of package styles ensures efficient heat dissipation and compact design for space-constrained applications.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliable performance even in demanding environmental conditions.

Minimum Operating Temperature: -25 °C

Wide range of operating temperatures allows for operation in varied temperature environments.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and reliable electrical connections.

Terminal Position: QUAD

Quad terminal position facilitates easy integration and stable mounting on the PCB.

Maximum Seated Height: 0.8 mm

Low maximum seated height enables a slim and compact form factor for space-saving installations.

Width (mm): 3 mm

Compact width allows for efficient use of board space and enables compact device designs.

Other IC type: POWER SUPPLY SUPPORT CIRCUIT

Designed specifically for power management, ensuring optimal performance and efficiency in power supply applications.

Minimum Supply Voltage (Vsup): 1.8 V

Low minimum supply voltage requirement allows for operation in low power applications and energy-efficient designs.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for accurate and reliable soldering during assembly without risking component damage.

Peak Reflow Temperature °C: 235

High peak reflow temperature capability ensures secure bonding and robust solder joints for durability.

Length: 3 mm

Compact length contributes to a space-efficient design and easier integration into electronic systems.

Terminal Form: NO LEAD

Lead-free terminal form complies with environmental regulations and reduces the risk of lead contamination.

Terminal Pitch: 0.5 mm

Fine terminal pitch provides high-density mounting capability for more functionality in a compact footprint.

Maximum Supply Voltage (Vsup): 5.5 V

High maximum supply voltage support enables compatibility with a wide range of power sources for versatile applications.

Technical Specifications

Power Management ICs NCN4555MNR2 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

INTERNAL LDO REQUIRES VBAT 2.7 TO 5.5 V

Adjustable Threshold:

NO

JESD-30 Code:

S-XQCC-N16

JESD-609 Code:

e0

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3 mm

Trade Compliance

NCN4555MNR2 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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