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NCN4555MN

Onsemi

NCN4555MN by Onsemi

The Onsemi NCN4555MN is a Power Management IC with 16 terminals in a square chip carrier package. It operates b/w -25 °C to 85°C, supporting supply voltages from 1.8V to 5.5V. Ideal for power supply circuits, it has a very thin profile and can withstand peak reflow temperatures up to 235°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,658 parts In-Stock

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3,658

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Digiode

USA . 984 parts In-Stock

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984

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Distributors (Availability)

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AZTECH Wire

Italy . 1,131 parts In-Stock

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$17.710

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SupplyDigital Components

Austria . 7,333 parts In-Stock

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7,333

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Kulean Microsystems

USA . 7,321 parts In-Stock

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7,321

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TANS Electronics

Latvia . 4,853 parts In-Stock

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4,853

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Problanco Electronics

Mexico . 3,823 parts In-Stock

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Corphita

USA . 1,649 parts In-Stock

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1,649

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UHIMA Technologies

Türkiye . 733 parts In-Stock

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733

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Microchip USA

USA . 315 parts In-Stock

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Corohmni

South Africa . 108 parts In-Stock

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Overview

Unleash the power of your devices with the NCN4555MN by Onsemi. As a leading manufacturer of Power Management ICs, Onsemi sets the standard for quality and innovation. This surface mount IC offers a compact square package with 16 terminals, making it ideal for a wide range of applications. From power supply support circuits to heat sink profiles, this versatile chip carrier delivers unmatched performance in any environment. Experience the reliability and efficiency that Onsemi is known for with the NCN4555MN, providing customers with the value and benefits they need to take their projects to the next level.

Feature Benefit Bullets

Surface Mount: YES

Surface mount packaging makes this product easy to integrate onto circuit boards, saving space and reducing assembly time.

Package Shape: SQUARE

The square package shape allows for efficient use of space on the circuit board, ideal for compact electronic devices.

No. of Terminals: 16

Having 16 terminals provides flexibility in connecting the power management IC to various circuits and components.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this power management IC can withstand demanding operational conditions.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature ensures reliable performance even in cold environments.

Terminal Finish: TIN LEAD

The terminal finish of TIN LEAD provides good solderability, ensuring a strong and stable connection.

Width (mm): 3 mm

The compact width of 3mm allows for easy placement on the circuit board, especially in tight spaces.

Minimum Supply Voltage (Vsup): 1.8 V

The low minimum supply voltage of 1.8V enables efficient power management in devices with lower power requirements.

Maximum Supply Voltage (Vsup): 5.5 V

The high maximum supply voltage of 5.5V allows this power management IC to be compatible with a wide range of devices and applications.

Technical Specifications

Power Management ICs NCN4555MN attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

INTERNAL LDO REQUIRES VBAT 2.7 TO 5.5 V

Adjustable Threshold:

NO

JESD-30 Code:

S-XQCC-N16

JESD-609 Code:

e0

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3 mm

Trade Compliance

NCN4555MN Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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