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NC7WZ00L8X-L22185

Onsemi

NC7WZ00L8X-L22185 by Onsemi

The Onsemi NC7WZ00L8X-L22185 is a logic gate with 2 functions and inputs, featuring a propagation delay of 9.8 ns at 1.8V supply voltage. Ideal for industrial applications, it operates b/w -40 to 85 °C with a max power supply current of 100mA.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,050 parts In-Stock

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Digiode

USA . 1,502 parts In-Stock

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Microchip USA

USA . 6,188 parts In-Stock

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$1.027

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$1.027

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AZTECH Wire

Italy . 1,011 parts In-Stock

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$13.160

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Component Stockers USA

USA . 582 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 18,805 parts In-Stock

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Problanco Electronics

Mexico . 4,481 parts In-Stock

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Corphita

USA . 1,955 parts In-Stock

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SupplyDigital Components

Austria . 1,464 parts In-Stock

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UHIMA Technologies

Türkiye . 990 parts In-Stock

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TANS Electronics

Latvia . 807 parts In-Stock

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Kulean Microsystems

USA . 612 parts In-Stock

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Corohmni

South Africa . 433 parts In-Stock

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Overview

Enhance your electronic designs with the NC7WZ00L8X-L22185 logic gates by Onsemi, known for their top-notch quality and reliability. This versatile component, featuring 2 functions and 2 inputs while operating at a nominal supply voltage of 1.8V, is ideal for a wide range of applications. With a low propagation delay of 9.8ns, surface mount capability, and industrial-grade temperature range, this product offers exceptional value and performance. Upgrade your projects today with the superior advantages that Onsemi brings to the table.

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 9.8 ns

Low propagation delay ensures fast and efficient operation.

Surface Mount: YES

Easily mountable on PCBs, saving space and making assembly easier.

No. of Functions: 2

Provides multiple logic functions in a single package, saving on board space and component count.

Nominal Supply Voltage / Vsup (V): 1.8

Low supply voltage allows for efficient power consumption.

Maximum Operating Temperature: 85 °C

Can operate in high temperature environments, increasing versatility of use.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Technical Specifications

Logic Gates NC7WZ00L8X-L22185 attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

S-XQCC-N8

JESD-609 Code:

e4

Length:

1.6 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

No. of Functions:

2

No. of Inputs:

2

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC8,.06SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, VERY THIN PROFILE

Packing Method:

TR

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

100 mA

Propagation Delay At Nominal Supply:

9.8 ns

Propagation Delay (tpd):

9.8 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

1.6 mm

Trade Compliance

NC7WZ00L8X-L22185 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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