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NC7SZ74L8X_F113

Onsemi

NC7SZ74L8X_F113 by Onsemi

The Onsemi NC7SZ74L8X_F113 is a CMOS latch with 13ns propagation delay, suitable for positive edge triggering applications. It operates at 1.65-5.5V, with load capacitance of 50pF and max power supply current of 50mA. Ideal for compact designs requiring fast signal processing in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 1,481 parts In-Stock

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Nova Conductors

Japan . 550 parts In-Stock

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Vyrian

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Andel Nordic

Denmark . 3,448 parts In-Stock

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$4.264

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$4.093

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AZTECH Wire

Italy . 695 parts In-Stock

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$16.201

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Ampacity Inc.

Singapore . 1,502 parts In-Stock

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Problanco Electronics

Mexico . 7,985 parts In-Stock

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Kulean Microsystems

USA . 6,125 parts In-Stock

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Continental Prestige Electronics

USA . 4,511 parts In-Stock

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Argo Parts USA

USA . 2,640 parts In-Stock

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SupplyDigital Components

Austria . 2,359 parts In-Stock

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Corphita

USA . 1,601 parts In-Stock

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UHIMA Technologies

Türkiye . 987 parts In-Stock

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Bastille Electronics

Australia . 870 parts In-Stock

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TANS Electronics

Latvia . 453 parts In-Stock

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Corohmni

South Africa . 411 parts In-Stock

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Perfect Parts

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Overview

Enhance your electronic projects with the NC7SZ74L8X_F113 by Onsemi, a top-tier manufacturer known for its high-quality components. As part of the Latches & Flip-Flops category, this product offers fast propagation delay and low power consumption, making it ideal for applications requiring quick response times and efficient energy usage. With a compact square package style and a wide operating temperature range, this chip carrier is perfect for space-constrained designs in various industries. Experience seamless performance and reliable functionality with the NC7SZ74L8X_F113, a valuable addition to your toolkit.

Feature Benefit Bullets

Propagation Delay: 13 ns

Fast response time makes this latch efficient for high-speed applications.

Surface Mount: YES

Easy to install and ideal for compact circuit designs.

Package Shape: SQUARE

Space-saving design allows for efficient use of board space.

Nominal Supply Voltage: 1.8 V

Low power requirement for energy-efficient operations.

Load Capacitance: 50 pF

Suitable for driving moderate capacitive loads.

No. of Terminals: 8

Provides flexibility for connecting to other components in the circuit.

Package Style: CHIP CARRIER, VERY THIN PROFILE

Offers durability and slim profile for better circuit integration.

Maximum I (ol): 32 Amp

High output current capability for driving heavy loads.

Trigger Type: POSITIVE EDGE

Allows for precise triggering in digital systems.

Minimum Operating Temperature: -40 °C

Can operate in harsh environments with low temperatures.

Maximum Operating Temperature: 85 °C

Suitable for a wide range of operating conditions.

Output Polarity: COMPLEMENTARY

Provides complementary signals for versatile applications.

Minimum Supply Voltage: 1.65 V

Can operate at low supply voltages for power-sensitive applications.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity.

Terminal Form: NO LEAD

Lead-free terminal construction for environmental compliance.

Terminal Pitch: 0.5 mm

Allows for precise and efficient connection to the PCB.

Maximum Supply Voltage: 5.5 V

Versatile voltage range for compatibility with various systems.

Maximum Power Supply Current: 50 mA

Efficient power usage for reliable and stable operation.

Technical Specifications

Latches & Flip-Flops NC7SZ74L8X_F113 attributes and parameters. Explore more Latches & Flip-Flops devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

S-XQCC-N8

Length:

1.6 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

No. of Bits:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Polarity:

COMPLEMENTARY

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC8,.06SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, VERY THIN PROFILE

Packing Method:

TR

Maximum Power Supply Current (ICC):

50 mA

Propagation Delay At Nominal Supply:

13 ns

Propagation Delay (tpd):

13 ns

Maximum Seated Height:

.55 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Trigger Type:

POSITIVE EDGE

Width:

1.6 mm

Trade Compliance

NC7SZ74L8X_F113 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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