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NC7S02L6X-L22175

Onsemi

NC7S02L6X-L22175 by Onsemi

NC7S02L6X-L22175 by Onsemi is a CMOS Logic Gate with 2 inputs, 35ns propagation delay, and 50pF load capacitance. It operates at a voltage range of 2-6V, has a max power supply current of 25mA, and can withstand temperatures from -40 to 85 °C. Ideal for industrial applications requiring fast signal processing in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,150 parts In-Stock

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Digiode

USA . 1,072 parts In-Stock

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Microchip USA

USA . 7,503 parts In-Stock

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$0.820

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AZTECH Wire

Italy . 191 parts In-Stock

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$9.520

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Kulean Microsystems

USA . 5,514 parts In-Stock

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TANS Electronics

Latvia . 4,233 parts In-Stock

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UHIMA Technologies

Türkiye . 984 parts In-Stock

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Problanco Electronics

Mexico . 894 parts In-Stock

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Corphita

USA . 883 parts In-Stock

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SupplyDigital Components

Austria . 414 parts In-Stock

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Corohmni

South Africa . 149 parts In-Stock

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Overview

Experience superior performance and reliability with the Onsemi NC7S02L6X-L22175 logic gate. Onsemi, a trusted manufacturer, delivers high-quality products that meet industry standards. This versatile component is ideal for various applications, offering fast propagation delay and low power consumption. With a compact design and dual terminal position, this logic gate provides a seamless integration into your projects. Trust Onsemi for top-notch technology that enhances your systems' efficiency and functionality. Upgrade to the NC7S02L6X-L22175 for exceptional value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and cost-effective, making the product reliable for long-term use.

Propagation Delay At Nominal Supply: 35 ns

Low propagation delay ensures fast operation and efficient performance of the logic gates.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation in compact electronic devices.

Package Shape: RECTANGULAR

Rectangular shape enables efficient packing and utilization of space on circuit boards.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V offers compatibility with a wide range of electronic systems.

Power Supplies (V): 2/6

Support for 2V and 6V power supplies provides flexibility in different system configurations.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliability in various environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing overall performance.

Technical Specifications

Logic Gates NC7S02L6X-L22175 attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

HC/UH

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e4

Length:

1.45 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

2.6 Amp

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

25 mA

Propagation Delay At Nominal Supply:

35 ns

Propagation Delay (tpd):

125 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NC7S02L6X-L22175 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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