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NB7VQ1006MMNHTBG

Onsemi

NB7VQ1006MMNHTBG by Onsemi

NB7VQ1006MMNHTBG by Onsemi is a telecom IC with 24 terminals, operating at temperatures from -40 to 85 °C. It has a supply voltage of 1.8V and max current of 0.2mA, suitable for telecom circuit applications. The package style is chip carrier with a very thin profile, making it ideal for space-constrained designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,282 parts In-Stock

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Digiode

USA . 369 parts In-Stock

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369

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TANS Electronics

Latvia . 8,206 parts In-Stock

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8,206

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Kulean Microsystems

USA . 4,787 parts In-Stock

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SupplyDigital Components

Austria . 2,021 parts In-Stock

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Corphita

USA . 1,429 parts In-Stock

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Problanco Electronics

Mexico . 1,293 parts In-Stock

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UHIMA Technologies

Türkiye . 575 parts In-Stock

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Corohmni

South Africa . 368 parts In-Stock

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Overview

Enhance your telecom interface systems with the NB7VQ1006MMNHTBG by Onsemi. Known for their high-quality products, Onsemi delivers reliable solutions for various applications in the telecom industry. This versatile IC offers customers exceptional value and benefits, including efficient power supplies, a compact design, and industrial-grade temperature performance. Upgrade your systems with this cutting-edge product to experience seamless connectivity and enhanced functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the product.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards.

Power Supplies (V): 1.8/2.5

Can accommodate different power supply voltages, providing flexibility in design.

No. of Terminals: 24

Sufficient number of terminals for connecting various components.

Maximum Operating Temperature: 85 °C

Can operate efficiently in high temperature environments.

Minimum Operating Temperature: -40 °C

Can operate in cold temperature environments without performance issues.

Terminal Position: QUAD

Allows for easy connection and integration with other components.

Maximum Seated Height: 1 mm

Low profile design for space-constrained applications.

Maximum Supply Current: 0.2 mA

Low power consumption for energy efficiency.

Telecom IC Type: TELECOM CIRCUIT

Specifically designed for telecom applications, ensuring optimal performance and compatibility.

Nominal Supply Voltage: 1.8 V

Stable supply voltage for reliable operation.

Technical Specifications

Other Function Telecom Interface ICs NB7VQ1006MMNHTBG attributes and parameters. Explore more Other Function Telecom Interface ICs devices from Onsemi

Specs

JESD-30 Code:

S-PQCC-N24

Length:

4 mm

No. of Functions:

1

No. of Terminals:

24

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC24,.16SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Power Supplies (V):

1.8/2.5

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Other Telecom ICs

Maximum Supply Current:

.2 mA

Nominal Supply Voltage:

1.8 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

4 mm

Trade Compliance

NB7VQ1006MMNHTBG Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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