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NB2309AI1HDTR2G

Onsemi

NB2309AI1HDTR2G by Onsemi

NB2309AI1HDTR2G clock driver by Onsemi features 16 terminals, 3.3V supply voltage, and 12A max I (ol). Ideal for industrial applications requiring a CMOS technology-based clock driver with a peak reflow temperature of 260 °C.

Median Price

$0.632

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 217,791 parts In-Stock

1+ parts

-

100+ parts

$0.621

1k+ parts

$0.515

10k+ parts

$0.459

217,791

-

$0.621

$0.515

$0.459

Verical

USA . 182,511 parts In-Stock

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$0.644

10k+ parts

$0.574

182,511

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$0.644

$0.574

Distributors (In-Stock)

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Digiode

USA . 2,188 parts In-Stock

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$0.484

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2,188

$0.484

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Flip Electronics

USA . 5,000 parts In-Stock

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5,000

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Vyrian

USA . 3,930 parts In-Stock

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LWI Electronics Inc

India . 4 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,043 parts In-Stock

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$0.458

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1,043

$0.458

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Corohmni

South Africa . 338 parts In-Stock

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$0.509

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338

$0.509

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Component Stockers USA

USA . 213,031 parts In-Stock

1+ parts

$0.510

100+ parts

$0.480

1k+ parts

$0.440

10k+ parts

$0.440

213,031

$0.510

$0.480

$0.440

$0.440

AZTECH Wire

Italy . 151 parts In-Stock

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$14.160

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$14.160

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Kepictronics

USA . 14,890 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 13,946 parts In-Stock

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TANS Electronics

Latvia . 8,034 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,942 parts In-Stock

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Microchip USA

USA . 5,772 parts In-Stock

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Kulean Microsystems

USA . 3,749 parts In-Stock

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Problanco Electronics

Mexico . 1,764 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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SupplyDigital Components

Austria . 417 parts In-Stock

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UHIMA Technologies

Türkiye . 76 parts In-Stock

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Overview

Enhance your electronic designs with the NB2309AI1HDTR2G Clock Driver & Buffer by Onsemi. Crafted with precision and quality materials, this product guarantees reliable performance in various applications. From ensuring precise timing signals to enhancing signal integrity, this clock driver offers unparalleled value to customers. With advanced features like 3-STATE output characteristics and a wide operating temperature range, it is the perfect choice for industrial-grade projects. Trust Onsemi's expertise in semiconductor technology and elevate your designs with the NB2309AI1HDTR2G Clock Driver & Buffer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material is durable and lightweight, making the product easy to handle and long-lasting.

Surface Mount: YES

Surface mounting allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V ensures compatibility with a wide range of systems and allows for efficient power usage.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, this product can withstand elevated temperatures in industrial environments, ensuring reliability.

Output Characteristics: 3-STATE

The 3-STATE output characteristic allows for high flexibility in controlling the output signal, enabling versatile applications in clock driver and buffer circuits.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high noise immunity, making the product efficient and reliable in various electronic systems.

Minimum fmax: 133.33 MHz

With a minimum operating frequency of 133.33 MHz, this clock driver and buffer module can handle high-speed signals effectively, making it suitable for demanding applications.

Technical Specifications

Clock Drivers & Buffers NB2309AI1HDTR2G attributes and parameters. Explore more Clock Drivers & Buffers devices from Onsemi

Specs

Family:

2309

Input Conditioning:

STANDARD

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

5 mm

Logic IC Type:

Maximum I (ol):

12 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inverted Outputs:

0

No. of Terminals:

16

No. of True Outputs:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Same Edge Skew (tskwd):

.25 ns

Maximum Seated Height:

1.2 mm

Sub-Category:

Clock Drivers

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4.4 mm

Minimum fmax:

133.33 MHz

Trade Compliance

NB2309AI1HDTR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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