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NB2308AI1HDTG

Onsemi

NB2308AI1HDTG by Onsemi

NB2308AI1HDTG clock driver by Onsemi operates at 3.3V with 16 terminals in a small outline package. It features 8 true outputs, 133.3MHz fmax, and -40 to 85 °C temperature range suitable for industrial applications requiring precise timing control.

Median Price

$0.672

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 43,552 parts In-Stock

1+ parts

-

100+ parts

$0.660

1k+ parts

$0.548

10k+ parts

$0.489

43,552

-

$0.660

$0.548

$0.489

Verical

USA . 4,416 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.685

10k+ parts

$0.611

4,416

-

-

$0.685

$0.611

Distributors (In-Stock)

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Digiode

USA . 195 parts In-Stock

1+ parts

$0.515

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195

$0.515

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Vyrian

USA . 4,892 parts In-Stock

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4,892

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Distributors (Availability)

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Corphita

USA . 714 parts In-Stock

1+ parts

$0.488

100+ parts

-

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714

$0.488

-

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Corohmni

South Africa . 229 parts In-Stock

1+ parts

$0.490

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229

$0.490

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AZTECH Wire

Italy . 450 parts In-Stock

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$18.480

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450

$18.480

-

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Continental Prestige Electronics

USA . 43,552 parts In-Stock

1+ parts

-

100+ parts

$0.461

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43,552

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$0.461

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TANS Electronics

Latvia . 7,367 parts In-Stock

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7,367

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Kulean Microsystems

USA . 6,422 parts In-Stock

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Microchip USA

USA . 4,472 parts In-Stock

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4,472

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Problanco Electronics

Mexico . 4,263 parts In-Stock

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4,263

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SupplyDigital Components

Austria . 3,063 parts In-Stock

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3,063

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UHIMA Technologies

Türkiye . 802 parts In-Stock

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802

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Perfect Parts

USA . 715 parts In-Stock

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715

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Kepictronics

USA . 217 parts In-Stock

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Overview

Enhance the performance of your electronic devices with the NB2308AI1HDTG clock driver by Onsemi. Crafted with precision using high-quality materials and advanced technology, this product ensures reliable operation in a wide range of applications. From enhancing signal integrity to improving overall system efficiency, this clock driver offers unparalleled value and benefits to customers looking for top-tier performance. Upgrade your devices today with the Onsemi clock driver and experience a new level of excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and lightweight, making the product easy to handle and resistant to damage.

Surface Mount: YES

Allows for easy installation on circuit boards without the need for through-holes, saving space and making assembly more efficient.

Nominal Supply Voltage / Vsup (V): 3.3

Optimal voltage for the product to operate efficiently and reliably.

Maximum I (ol): 12 Amp

Can handle high currents, making it suitable for driving and buffering clock signals in various applications.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, suitable for industrial environments.

Output Characteristics: 3-STATE

Allows for high impedance state when disabled, reducing power consumption and signal interference.

Minimum Operating Temperature: -40 °C

Can operate in low-temperature environments, increasing the product's versatility and reliability.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable.

Minimum fmax: 133.3 MHz

Can support high clock frequencies, suitable for demanding applications that require fast signal processing.

Maximum Supply Voltage (Vsup): 3.6 V

With a higher maximum supply voltage, the product has a wider operating range and can accommodate fluctuations in the power source.

Technical Specifications

Clock Drivers & Buffers NB2308AI1HDTG attributes and parameters. Explore more Clock Drivers & Buffers devices from Onsemi

Specs

Family:

2308

Input Conditioning:

STANDARD

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

5 mm

Logic IC Type:

Maximum I (ol):

12 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inverted Outputs:

0

No. of Terminals:

16

No. of True Outputs:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Same Edge Skew (tskwd):

.2 ns

Maximum Seated Height:

1.2 mm

Sub-Category:

Clock Drivers

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4.4 mm

Minimum fmax:

133.3 MHz

Trade Compliance

NB2308AI1HDTG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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