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NB2308AC4DR2G

Onsemi

NB2308AC4DR2G by Onsemi

NB2308AC4DR2G clock driver by Onsemi features 16 terminals, 3.3V supply voltage, and 8A max I (ol). Ideal for applications requiring a small outline package style, this CMOS technology device operates b/w 0-70 °C with a peak reflow temperature of 260°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 7,510 parts In-Stock

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Digiode

USA . 885 parts In-Stock

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AZTECH Wire

Italy . 678 parts In-Stock

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$9.410

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Ampacity Inc.

Singapore . 552 parts In-Stock

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$37.000

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Component Stockers USA

USA . 739 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 15,951 parts In-Stock

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Kulean Microsystems

USA . 6,031 parts In-Stock

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TANS Electronics

Latvia . 2,713 parts In-Stock

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SupplyDigital Components

Austria . 1,681 parts In-Stock

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Problanco Electronics

Mexico . 547 parts In-Stock

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Corohmni

South Africa . 498 parts In-Stock

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Microchip USA

USA . 438 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 375 parts In-Stock

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Overview

Unlock the potential of your electronics with the NB2308AC4DR2G clock driver and buffer from Onsemi. Crafted with precision and expertise, this small outline package boasts a reliable performance that ensures seamless operation in various applications. Whether you're looking to enhance the speed and efficiency of your devices or improve overall functionality, this product delivers on all fronts. Don't settle for mediocre when you can have exceptional quality at your fingertips. Upgrade to the NB2308AC4DR2G and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection for the internal components of the clock driver, making it durable and long-lasting.

Surface Mount: YES

This feature allows for easy and efficient installation of the clock driver onto a printed circuit board, saving time and effort.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage is commonly used in many electronic devices, making this clock driver compatible with a wide range of applications.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this clock driver can withstand harsh environmental conditions and operate reliably in various settings.

No. of True Outputs: 8

Having 8 true outputs allows for multiple connections and routing options, making this clock driver versatile and suitable for complex clock distribution networks.

Technical Specifications

Clock Drivers & Buffers NB2308AC4DR2G attributes and parameters. Explore more Clock Drivers & Buffers devices from Onsemi

Specs

Family:

2308

Input Conditioning:

STANDARD

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e3

Length:

9.9 mm

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inverted Outputs:

0

No. of Terminals:

16

No. of True Outputs:

8

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Same Edge Skew (tskwd):

.2 ns

Maximum Seated Height:

1.75 mm

Sub-Category:

Clock Drivers

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Minimum fmax:

133.3 MHz

Trade Compliance

NB2308AC4DR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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