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N84C162WD30TG

Onsemi

N84C162WD30TG by Onsemi

N84C162WD30TG by Onsemi is a Power Management IC with 3.3V supply voltage, suitable for military-grade applications. It features small outline package style, dual terminal position, and adjustable threshold. With surface mount capability and operating temperature range of -55 to 125 °C, it is ideal for power supply management circuits in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,949 parts In-Stock

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Digiode

USA . 1,691 parts In-Stock

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Microchip USA

USA . 5,831 parts In-Stock

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$5.969

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$5.969

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AZTECH Wire

Italy . 69 parts In-Stock

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$11.590

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QUARKTWIN TECHNOLOGY LTD

USA . 11,477 parts In-Stock

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Problanco Electronics

Mexico . 7,354 parts In-Stock

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SupplyDigital Components

Austria . 5,823 parts In-Stock

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TANS Electronics

Latvia . 3,558 parts In-Stock

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Corphita

USA . 2,490 parts In-Stock

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Kulean Microsystems

USA . 1,916 parts In-Stock

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UHIMA Technologies

Türkiye . 286 parts In-Stock

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Corohmni

South Africa . 181 parts In-Stock

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Overview

Discover the power of the N84C162WD30TG by Onsemi, a high-quality Power Management IC designed to optimize performance and efficiency in various applications. Manufactured by Onsemi, a trusted name in the industry, this IC offers reliability and innovation. Ideal for power supply management circuits, this product boasts a small outline package style with dual terminal position for easy installation. With a nominal supply voltage of 3.3V and adjustable threshold feature, customers can expect superior functionality and versatility. Experience the benefits of seamless integration and enhanced performance with the N84C162WD30TG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and cost-effective, making the product suitable for various applications.

Surface Mount: YES

The surface mount feature allows for easy installation on circuit boards, saving time and effort during assembly.

Nominal Supply Voltage (Vsup): 3.3 V

The 3.3V supply voltage is commonly used in many electronic devices, ensuring compatibility with a wide range of systems.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures reliable performance even in demanding environments.

Minimum Operating Temperature: -55 °C

The wide temperature range allows the product to operate effectively in both extreme cold and hot conditions.

Nominal Supply Voltage (Vsup): 3.3 V

The 3.3V supply voltage is commonly used in many electronic devices, ensuring compatibility with a wide range of systems.

Maximum Seated Height: 1.75 mm

The low profile design of the product allows for compact and space-efficient installations.

Adjustable Threshold: YES

The adjustable threshold feature provides flexibility in setting voltage levels according to specific project requirements.

Technical Specifications

Power Management ICs N84C162WD30TG attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

YES

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3.9 mm

Trade Compliance

N84C162WD30TG Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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