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N84C163WD25TG

Onsemi

N84C163WD25TG by Onsemi

N84C163WD25TG by Onsemi is a Power Management IC with 3.3V supply voltage, suitable for military applications. It features small outline package style, dual terminal position, and adjustable threshold. With a temperature range of -55 to 125 °C, it is ideal for power supply management circuits in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,003 parts In-Stock

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Digiode

USA . 101 parts In-Stock

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101

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Microchip USA

USA . 5,499 parts In-Stock

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$5.969

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$5.969

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AZTECH Wire

Italy . 214 parts In-Stock

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$14.530

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SupplyDigital Components

Austria . 6,819 parts In-Stock

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Kulean Microsystems

USA . 5,950 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,276 parts In-Stock

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Problanco Electronics

Mexico . 3,839 parts In-Stock

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TANS Electronics

Latvia . 2,760 parts In-Stock

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Corphita

USA . 1,958 parts In-Stock

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UHIMA Technologies

Türkiye . 918 parts In-Stock

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Corohmni

South Africa . 443 parts In-Stock

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Overview

Enhance your power management solutions with the N84C163WD25TG by Onsemi. Manufactured with top-quality materials and cutting-edge technology, this Power Management IC offers unparalleled reliability and efficiency. Ideal for a wide range of applications, this product provides customers with the value and benefits they need to maximize their performance. Say goodbye to power supply issues and hello to seamless operation with the N84C163WD25TG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the power management IC, ensuring its durability and reliability in various operating conditions.

Surface Mount: YES

The surface mount capability makes it easier to integrate this power management IC onto circuit boards, saving space and facilitating automated assembly processes.

Nominal Supply Voltage (Vsup): 3.3 V

Operating at a standard voltage level of 3.3V, this power management IC is compatible with a wide range of devices and systems, providing consistent power regulation.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this power management IC can handle demanding operating conditions without compromising performance or reliability.

Terminal Finish: NICKEL PALLADIUM GOLD

The use of nickel palladium gold terminal finish enhances the conductivity and corrosion resistance of the terminals, ensuring reliable electrical connections over time.

Technology: CMOS

Utilizing CMOS technology enables this power management IC to operate efficiently with low power consumption, making it suitable for battery-powered devices and energy-efficient applications.

Maximum Supply Voltage (Vsup): 6 V

Capable of handling a maximum supply voltage of 6V, this power management IC offers flexibility in various power input scenarios, accommodating a wider range of devices and systems.

Adjustable Threshold: YES

The adjustable threshold feature allows for customized power management settings, providing versatility and adaptability for different usage requirements or system configurations.

Technical Specifications

Power Management ICs N84C163WD25TG attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

YES

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3.9 mm

Trade Compliance

N84C163WD25TG Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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