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N84C163WD30TG

Onsemi

N84C163WD30TG by Onsemi

N84C163WD30TG by Onsemi is a Power Management IC with 3.3V supply voltage, suitable for military applications. It features small outline package style, dual terminal position, and adjustable threshold. With operating temperatures from -55 to 125 °C, it is ideal for power supply management circuits in harsh environments.

Median Price

$1.131

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 14,315 parts In-Stock

1+ parts

-

100+ parts

$1.090

1k+ parts

$0.905

10k+ parts

$0.807

14,315

-

$1.090

$0.905

$0.807

DigiKey

USA . 14,315 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.360

10k+ parts

-

14,315

-

-

$1.360

-

Verical

USA . 14,315 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.131

10k+ parts

$1.008

14,315

-

-

$1.131

$1.008

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics

USA . 18,000 parts In-Stock

1+ parts

$0.557

100+ parts

-

1k+ parts

-

10k+ parts

-

18,000

$0.557

-

-

-

Digiode

USA . 1,893 parts In-Stock

1+ parts

$0.846

100+ parts

-

1k+ parts

-

10k+ parts

-

1,893

$0.846

-

-

-

Vyrian

USA . 1,730 parts In-Stock

1+ parts

$0.891

100+ parts

-

1k+ parts

-

10k+ parts

-

1,730

$0.891

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,454 parts In-Stock

1+ parts

$0.802

100+ parts

-

1k+ parts

-

10k+ parts

-

1,454

$0.802

-

-

-

Corohmni

South Africa . 184 parts In-Stock

1+ parts

$0.891

100+ parts

-

1k+ parts

-

10k+ parts

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184

$0.891

-

-

-

Microchip USA

USA . 2,666 parts In-Stock

1+ parts

$5.969

100+ parts

-

1k+ parts

-

10k+ parts

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2,666

$5.969

-

-

-

SupplyDigital Components

Austria . 6,185 parts In-Stock

1+ parts

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6,185

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Problanco Electronics

Mexico . 4,706 parts In-Stock

1+ parts

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4,706

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Kulean Microsystems

USA . 373 parts In-Stock

1+ parts

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373

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UHIMA Technologies

Türkiye . 59 parts In-Stock

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59

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TANS Electronics

Latvia . 12 parts In-Stock

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12

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Overview

Unleash the power of efficient power management with the N84C163WD30TG by Onsemi. Designed with precision and quality in mind, this Power Management IC offers unparalleled performance and reliability for a wide range of applications. From extending battery life to optimizing power consumption, this small outline package delivers exceptional value and benefits to customers looking for superior power supply management solutions. Trust Onsemi to provide cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the internal components of the Power Management IC.

Surface Mount: YES

The surface mount capability allows for easy and efficient installation on circuit boards, saving time and labor during assembly.

Nominal Supply Voltage (Vsup): 3.3 V

The 3.3V supply voltage ensures compatibility with a wide range of electronic devices and systems.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C ensures reliable performance even in demanding environments with elevated temperatures.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55 °C allows for use in applications where cold temperatures may be encountered.

Technology: CMOS

The CMOS technology provides low power consumption and efficient operation, making the Power Management IC suitable for battery-powered devices.

Terminal Form: GULL WING

The gull wing terminal form allows for easier soldering and better mechanical stability, enhancing the reliability of the connection.

Maximum Supply Voltage (Vsup): 6 V

The 6V maximum supply voltage range provides flexibility for use in various power supply configurations.

Technical Specifications

Power Management ICs N84C163WD30TG attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

YES

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3.9 mm

Trade Compliance

N84C163WD30TG Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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