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N84C161WD25TG

Onsemi

N84C161WD25TG by Onsemi

N84C161WD25TG by Onsemi is a Power Management IC with 3.3V nominal voltage, suitable for MILITARY applications. It features 8 terminals in a SMALL OUTLINE package style and can operate b/w -55 to 125 °C temperature range. The IC also offers adjustable threshold and supports surface mount installation.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Flip Electronics

USA . 39,000 parts In-Stock

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Vyrian

USA . 7,163 parts In-Stock

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Digiode

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Microchip USA

USA . 5,674 parts In-Stock

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$5.969

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AZTECH Wire

Italy . 162 parts In-Stock

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$15.220

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Problanco Electronics

Mexico . 6,535 parts In-Stock

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TANS Electronics

Latvia . 3,005 parts In-Stock

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SupplyDigital Components

Austria . 1,119 parts In-Stock

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Kulean Microsystems

USA . 1,113 parts In-Stock

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Corohmni

South Africa . 421 parts In-Stock

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UHIMA Technologies

Türkiye . 340 parts In-Stock

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Corphita

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Overview

Discover the N84C161WD25TG by Onsemi, a top-quality Power Management IC that guarantees reliability and efficiency. Manufactured by Onsemi, a trusted leader in the industry, this product is perfect for a wide range of applications. With its small outline package style and adjustable threshold feature, this IC offers unparalleled value to customers. Experience the benefits of precise power supply management with the N84C161WD25TG and elevate your projects to the next level with ease.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and reliability for long-term use.

Surface Mount: YES

Surface mount capability allows for easy and efficient assembly onto circuit boards.

Nominal Supply Voltage (Vsup): 3.3 V

Suitable nominal supply voltage for various electronic devices and applications.

No. of Terminals: 8

A sufficient number of terminals for connectivity and functionality.

Maximum Operating Temperature: 125 °C

High maximum operating temperature tolerance for reliability in various environments.

Width (mm): 3.9 mm

Compact width for space-saving design and integration into smaller devices.

Other IC type: POWER SUPPLY MANAGEMENT CIRCUIT

This IC type specifically designed for power supply management ensures efficient power utilization and regulation.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation, making it energy-efficient.

Maximum Supply Voltage (Vsup): 6 V

Wide range of maximum supply voltage allows for versatility in different power supply requirements.

Adjustable Threshold: YES

Ability to adjust threshold levels for tailored power management control.

Technical Specifications

Power Management ICs N84C161WD25TG attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

YES

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3.9 mm

Trade Compliance

N84C161WD25TG Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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