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MURA260T3

Onsemi

MURA260T3 by Onsemi

MURA260T3 by Onsemi is a single rectifier diode with a max reverse recovery time of 0.075 us and a max forward voltage of 1.2V. It is designed for high voltage ultra-fast recovery power applications, operating at temperatures up to 175 °C. This surface-mount diode has a peak repetitive peak reverse voltage of 600V and can handle a max output current of 2A.

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USA . 213 parts In-Stock

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Overview

Experience the superior quality and performance of the MURA260T3 diode by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch reliability and efficiency in all their products. The MURA260T3 is perfect for high voltage ultra-fast recovery power applications, offering customers unmatched value and benefits. With a maximum output current of 2A and a peak repetitive peak reverse voltage of 600V, this diode is a game-changer for your power needs. Trust Onsemi to deliver unrivaled quality and performance every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy packaging provides good protection for the diode, ensuring durability and reliability.

Config: SINGLE

Single configuration simplifies the circuit design and installation process.

Surface Mount: YES

Surface mount capability makes it easy to integrate the diode into modern PCB designs.

Maximum Reverse Recovery Time: 0.075 us

Ultra-fast reverse recovery time ensures efficient and responsive performance.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy placement on the circuit board.

No. of Terminals: 2

Two terminals make the connection simple and straightforward.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Ideal for high voltage applications requiring ultra-fast recovery power.

Maximum Operating Temperature: 175 °C

Can operate at high temperatures without performance degradation.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and conductivity.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit connections.

Peak Reflow Temperature °C: 235

Can withstand high reflow temperatures during assembly process.

Diode Type: RECTIFIER DIODE

Rectifier diode design ensures efficient conversion of AC to DC.

Maximum Forward Voltage (VF): 1.2 V

Low forward voltage drop leads to energy efficiency.

Maximum Output Current: 2 A

Able to handle high output currents without issues.

Terminal Form: C BEND

C bend terminal form allows for easy soldering and connection.

Maximum Repetitive Peak Reverse Voltage: 600 V

Can handle high reverse voltages safely and reliably.

Maximum Non Repetitive Peak Forward Current: 30 A

Capable of handling high forward currents for short durations.

Diode Element Material: SILICON

Silicon diode element material is commonly used for its reliability and efficiency.

Technical Specifications

Diodes & Rectifiers MURA260T3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.075 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MURA260T3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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