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MURA240T3

Onsemi

MURA240T3 by Onsemi

MURA240T3 by Onsemi is a single rectifier diode with a max output current of 2A and peak repetitive reverse voltage of 400V. It features a fast recovery time of 0.065us, making it ideal for high voltage power applications. The diode is surface mountable, has a small outline package style, and operates at temperatures up to 175 °C.

Median Price

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Lifecycle Status

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1k+

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AZTECH Wire

Italy . 1,032 parts In-Stock

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Problanco Electronics

Mexico . 7,742 parts In-Stock

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TANS Electronics

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Infinite Electronics LLP (Excess)

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SupplyDigital Components

Austria . 4,974 parts In-Stock

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Kulean Microsystems

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UHIMA Technologies

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Overview

Experience the power of the MURA240T3 diode by Onsemi, a top-quality manufacturer in the industry. This diode offers high voltage ultra-fast recovery power, making it ideal for a wide range of applications. With a peak repetitive peak reverse voltage of 400V and a maximum output current of 2A, this diode provides reliable performance and efficiency. Trust Onsemi to deliver cutting-edge technology that meets your needs and exceeds your expectations. Choose the MURA240T3 for superior quality and performance in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan.

Config: SINGLE

Simplicity in configuration makes it easy to install and use.

Surface Mount: YES

Suitable for compact circuit designs and allows for easy integration on PCBs.

Maximum Reverse Recovery Time: 0.065 us

Fast reverse recovery time ensures efficient operation and minimal power loss.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Ideal for high voltage applications requiring ultra-fast recovery power.

Maximum Operating Temperature: 175 °C

Operates efficiently at high temperatures, suitable for various industrial environments.

Terminal Finish: TIN LEAD

Provides good conductivity and solderability for easy installation.

Maximum Forward Voltage (VF): 1.05 V

Low forward voltage drop leads to higher efficiency and reduced power loss.

Maximum Output Current: 2 A

Capable of handling moderate current loads in electronic circuits.

Maximum Repetitive Peak Reverse Voltage: 400 V

Suitable for applications requiring high reverse voltage protection.

Technical Specifications

Diodes & Rectifiers MURA240T3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.05 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

35 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Recovery Time:

.065 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MURA240T3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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