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MURA140T3

Onsemi

MURA140T3 by Onsemi

MURA140T3 by Onsemi is a single diode with ultra-fast recovery power, ideal for applications requiring high-speed rectification. With a max forward voltage of 0.8V and output current of 2A, it operates at temperatures up to 175 °C. Its small outline package makes it suitable for surface mount designs in various electronic systems.

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1k+

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AZTECH Wire

Italy . 1,099 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

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Corphita

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TANS Electronics

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Problanco Electronics

Mexico . 1,196 parts In-Stock

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Overview

Get ready to experience top-tier quality and performance with the MURA140T3 by Onsemi. As a leading manufacturer in the industry of Diodes & Rectifiers, Onsemi delivers excellence through its innovative products. The MURA140T3 is designed for ultra-fast recovery power applications, offering customers exceptional value and benefits. With a maximum output current of 2A and a maximum repetitive peak reverse voltage of 400V, this rectifier diode ensures reliability and efficiency in various electronic devices. Upgrade your power solutions with the MURA140T3 and witness the difference in performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the diode, making it durable and reliable for long-term use.

Config: SINGLE

A single configuration simplifies the circuit design and makes installation easier.

Surface Mount: YES

Surface mount design allows for easy and efficient PCB assembly.

Maximum Reverse Recovery Time: 0.065 us

The ultra-fast reverse recovery time ensures efficient switching and minimal power loss.

Package Shape: RECTANGULAR

Rectangular shape takes up less space on the PCB, allowing for compact designs.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces the chances of wiring errors.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for higher component density.

Application: ULTRA FAST RECOVERY POWER

Designed for ultra-fast recovery power applications, ideal for high-speed electronic devices.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliable performance even under extreme conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead finish provides good solderability and ensures a secure connection.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting options and compatibility with various PCB layouts.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time minimizes thermal stress on the diode during soldering process.

Peak Reflow Temperature °C: 235

High peak reflow temperature ensures proper soldering and reliable connection.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for converting alternating current to direct current, making it versatile for different applications.

Maximum Forward Voltage (VF): 0.8 V

Low forward voltage drop minimizes power loss and improves efficiency of the diode.

Maximum Output Current: 2 A

High maximum output current rating allows for handling moderate power loads with ease.

Terminal Form: C BEND

C bend terminal form provides mechanical stability and ease of soldering during installation.

Maximum Repetitive Peak Reverse Voltage: 400 V

High reverse voltage rating ensures protection against voltage spikes and surges.

Maximum Non Repetitive Peak Forward Current: 35 A

High non-repetitive peak forward current rating allows for handling short-term high current surges.

Diode Element Material: SILICON

Silicon diode element material offers good electrical properties and reliability for long-term use.

Technical Specifications

Diodes & Rectifiers MURA140T3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.8 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

35 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Recovery Time:

.065 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MURA140T3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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