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MURA110T3

Onsemi

MURA110T3 by Onsemi

MURA110T3 by Onsemi is a single rectifier diode with a max output current of 2A and forward voltage of 0.66V. It has a peak repetitive reverse voltage of 100V, making it suitable for applications requiring high efficiency and low power loss in small outline packages. Ideal for surface mount designs operating up to 175°C, this diode is commonly used in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

1k+

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Chip Stock

USA . 92,500 parts In-Stock

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Vyrian

USA . 11,066 parts In-Stock

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Odintec Ltd.

Israel . 5,000 parts In-Stock

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A2Z Electronics, Inc.

USA . 4,765 parts In-Stock

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Ack Elektronik San.Tic.Ltd.Sti

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North Shore Components

USA . 3,186 parts In-Stock

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Bristol Electronics

USA . 2,946 parts In-Stock

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Semi Source

USA . 1,330 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,266 parts In-Stock

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Semtec, LLC

USA . 1,049 parts In-Stock

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Nova Conductors

Japan . 600 parts In-Stock

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Digiode

USA . 392 parts In-Stock

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Velocity Electronics

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NPI Materials, Inc.

USA . 50 parts In-Stock

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Ampacity Inc.

Singapore . 553 parts In-Stock

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$2.010

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AZTECH Wire

Italy . 409 parts In-Stock

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Kulean Microsystems

USA . 7,711 parts In-Stock

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TANS Electronics

Latvia . 2,547 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 1,238 parts In-Stock

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Problanco Electronics

Mexico . 765 parts In-Stock

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Corohmni

South Africa . 471 parts In-Stock

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UHIMA Technologies

Türkiye . 340 parts In-Stock

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Bastille Electronics

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Overview

Unlock a world of possibilities with the MURA110T3 by Onsemi, a top-quality rectifier diode that promises reliability and efficiency. Manufactured by Onsemi, a trusted name in the industry, this diode offers superior performance in a variety of applications. From power supplies to battery chargers, the MURA110T3 delivers exceptional value, benefits, and advantages to customers looking for a high-performing solution. Say goodbye to downtime and hello to seamless operations with the MURA110T3.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for a variety of environments.

Config: SINGLE

Simplified configuration for easy integration in circuits, reducing complexity.

Surface Mount: YES

Allows for easy and secure mounting on PCBs, saving space and improving assembly efficiency.

Maximum Reverse Recovery Time: 30 us

Fast reverse recovery time ensures efficient operation and reduces power loss.

Package Shape: RECTANGULAR

Convenient shape for easy placement and handling during assembly.

No. of Terminals: 2

Simplified interface for connections, reducing complexity in circuit design.

Package Style (Meter): SMALL OUTLINE

Compact design for space-saving and efficient PCB layout.

Maximum Operating Temperature: 175 °C

Wide operating temperature range allows for reliable performance in various environmental conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

Provides good solderability and conductivity for reliable connections.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit design and layout.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper reflow soldering process for consistent and reliable connections.

Peak Reflow Temperature °C: 235

High peak reflow temperature capability for reliable soldering process.

Diode Type: RECTIFIER DIODE

Designed for rectification of AC to DC, making it a versatile choice for power conversion applications.

Maximum Forward Voltage (VF): 0.66 V

Low forward voltage drop for efficient power conversion and reduced energy loss.

Maximum Output Current: 2 A

High output current rating for handling moderate power requirements in circuits.

Terminal Form: C BEND

C bend terminal form for secure and reliable connections in circuit.

Maximum Repetitive Peak Reverse Voltage: 100 V

Suitable for applications requiring moderate reverse voltage protection.

Maximum Non Repetitive Peak Forward Current: 50 A

Capability to handle high peak forward currents for transient protection.

Diode Element Material: SILICON

Silicon diode element material for reliable and efficient rectification.

Technical Specifications

Diodes & Rectifiers MURA110T3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.66 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Recovery Time:

30 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MURA110T3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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