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MURA105T3

Onsemi

MURA105T3 by Onsemi

MURA105T3 by Onsemi is a single rectifier diode with a max output current of 2A and a max repetitive peak reverse voltage of 50V. It is designed for applications requiring fast recovery times, such as power supplies and battery chargers. The diode's small outline package and surface mount capability make it suitable for compact electronic designs.

Median Price

$0.375

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 19,858 parts In-Stock

1+ parts

$0.375

100+ parts

$0.188

1k+ parts

$0.075

10k+ parts

$0.047

19,858

$0.375

$0.188

$0.075

$0.047

Dan-Mar Components

USA . 17,018 parts In-Stock

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17,018

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Chip Stock

USA . 13,900 parts In-Stock

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13,900

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Vyrian

USA . 10,743 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 3,026 parts In-Stock

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3,026

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Microfarads

USA . 2,684 parts In-Stock

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2,684

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Digiode

USA . 2,142 parts In-Stock

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LWI Electronics Inc

India . 5 parts In-Stock

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5

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Distributors (Availability)

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AZTECH Wire

Italy . 101 parts In-Stock

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$18.000

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101

$18.000

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QUARKTWIN TECHNOLOGY LTD

USA . 17,799 parts In-Stock

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17,799

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Kulean Microsystems

USA . 7,977 parts In-Stock

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TANS Electronics

Latvia . 7,231 parts In-Stock

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Problanco Electronics

Mexico . 7,107 parts In-Stock

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Metaverse IC Inc.

Canada . 4,890 parts In-Stock

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Perfect Parts

USA . 3,045 parts In-Stock

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SupplyDigital Components

Austria . 2,083 parts In-Stock

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Corphita

USA . 1,455 parts In-Stock

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UHIMA Technologies

Türkiye . 969 parts In-Stock

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Corohmni

South Africa . 182 parts In-Stock

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Overview

Experience superior performance and reliability with the MURA105T3 diode rectifier by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and innovation in their products. Ideal for a wide range of applications, this diode offers fast and efficient power management without compromising on durability. With its low forward voltage and high output current capability, customers can benefit from increased efficiency and cost savings. Upgrade your electronic devices with the MURA105T3 and enjoy the advantages it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various environments and conditions.

Config: SINGLE

Simplifies the circuit design and installation process, making it easier to integrate into different systems.

Surface Mount: YES

Allows for easy and secure mounting on PCBs, saving space and improving overall circuit reliability.

Maximum Reverse Recovery Time: 30 us

Ensures fast switching characteristics and efficient performance of the diode, reducing energy loss and improving circuit efficiency.

Package Shape: RECTANGULAR

Facilitates easy placement and orientation on the PCB, enhancing the overall assembly process.

No. of Terminals: 2

Simplifies the connection process and makes it easier to incorporate the diode into different circuit configurations.

Package Style (Meter): SMALL OUTLINE

Helps in saving space on the PCB and enables high-density mounting, optimal for compact circuit designs.

Maximum Operating Temperature: 175 °C

Ensures stable operation even in high-temperature environments, making it reliable for a wide range of applications.

Terminal Finish: TIN LEAD

Provides good solderability and conductivity, ensuring reliable electrical connections and long-term performance.

Terminal Position: DUAL

Allows for versatile mounting orientations, providing flexibility in circuit design and installation.

Peak Reflow Temperature °C: 235

Withstands high-temperature reflow soldering processes, ensuring secure and durable connections during assembly.

Diode Type: RECTIFIER DIODE

Designed specifically for rectification applications, offering low forward voltage drop and high current capability.

Maximum Forward Voltage (VF): 0.66 V

Ensures low power loss and efficient operation, making it suitable for energy-efficient applications.

Maximum Output Current: 2 A

Capable of handling high current levels, suitable for a variety of power supply and rectification tasks.

Terminal Form: C BEND

Enhances the mechanical strength of the connection, ensuring reliable performance under varying conditions.

Maximum Repetitive Peak Reverse Voltage: 50 V

Provides ample reverse voltage protection, making it suitable for a wide range of circuit applications.

Maximum Non Repetitive Peak Forward Current: 50 A

Capable of handling surge currents, ensuring reliable operation under transient conditions.

Diode Element Material: SILICON

Offers good thermal stability, high conductivity, and reliability, making it a suitable choice for various electronic applications.

Technical Specifications

Diodes & Rectifiers MURA105T3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.66 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Recovery Time:

30 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MURA105T3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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