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MPQ2906

Onsemi

MPQ2906 by Onsemi

MPQ2906 by Onsemi is a PNP BJT with 4 elements, ideal for switching applications. It has a max Vce of 40V, Ic of 0.6A, and hFE of 20. This transistor comes in a rectangular package with 14 terminals in an in-line style suitable for through-hole mounting.

Median Price

$4.950

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

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American Microsemiconductor Inc.

USA . 1,380 parts In-Stock

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$4.950

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Vyrian

USA . 1,916 parts In-Stock

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Digiode

USA . 1,220 parts In-Stock

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Nova Conductors

Japan . 450 parts In-Stock

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First Choice Components Inc.

USA . 405 parts In-Stock

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Q Components

USA . 85 parts In-Stock

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Bristol Electronics

USA . 14 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 13 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 11 parts In-Stock

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LittleDiode

UK . 3 parts In-Stock

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MISTER SPROCKETS

USA . 3 parts In-Stock

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R&J Components

USA . 2 parts In-Stock

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Corohmni

South Africa . 351 parts In-Stock

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Kulean Microsystems

USA . 8,066 parts In-Stock

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Problanco Electronics

Mexico . 6,689 parts In-Stock

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TANS Electronics

Latvia . 5,658 parts In-Stock

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SupplyDigital Components

Austria . 3,434 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Perfect Parts

USA . 907 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 132 parts In-Stock

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Overview

Unlock the power of the MPQ2906 by Onsemi, a top-quality Power Bipolar Junction Transistor designed for switching applications. With the assurance of Onsemi's expertise and reputation for excellence, this PNP transistor offers unmatched performance and reliability. Ideal for a wide range of electronic devices, the MPQ2906 boasts a compact package shape and high collector-emitter voltage, making it perfect for maximizing efficiency and functionality. Experience seamless operation and superior results with the MPQ2906 from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protects the transistor from environmental factors, ensuring a longer lifespan.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-power switching applications, making this product suitable for various switching tasks.

Configuration: SEPARATE, 4 ELEMENTS

The separate configuration with 4 elements allows for more flexibility and control in circuit design, making it ideal for complex switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor excels in efficiently turning on and off high-powered circuits.

Package Shape: RECTANGULAR

The rectangular shape of the package makes it easy to mount and integrate into circuit designs, saving space and simplifying the overall layout.

Terminal Form: THROUGH-HOLE

Through-hole terminals are easy to solder onto circuit boards, providing a secure and reliable connection in various applications.

No. of Elements: 4

Having 4 elements allows for more complex circuit arrangements and enables higher functionality in switching operations.

No. of Terminals: 14

With 14 terminals, this transistor offers ample connectivity options for diverse circuit configurations and applications.

Package Style (Meter): IN-LINE

The in-line package style is convenient for easy installation and connection in linear circuits, making it suitable for a wide range of applications.

Minimum DC Current Gain (hFE): 20

A minimum DC current gain of 20 ensures consistent and reliable amplification of current signals in the circuit, enhancing performance.

Maximum Collector-Emitter Voltage: 40 V

With a high maximum collector-emitter voltage of 40V, this transistor can handle higher voltage levels, making it suitable for various power applications.

Transistor Element Material: SILICON

Silicon is a widely-used semiconductor material known for its performance and efficiency, making this transistor a reliable choice for demanding applications.

Maximum Collector Current (IC): 0.6 A

The maximum collector current of 0.6A allows for handling moderate power levels, making this transistor suitable for a wide range of switching tasks.

Terminal Position: DUAL

Dual terminal positions provide flexibility in connectivity and circuit design, allowing for versatile applications and configurations.

Nominal Transition Frequency (fT): 200 MHz

With a high nominal transition frequency of 200 MHz, this transistor can quickly switch on and off at high frequencies, making it suitable for fast-paced switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MPQ2906 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-116

JESD-30 Code:

R-PDIP-T14

No. of Elements:

4

No. of Terminals:

14

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPQ2906 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

NSN

5961-01-139-5218, 5961011395218, 5962-99-788-3487, 5962997883487

NIIN

011395218, 997883487

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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