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MPQ2222

Onsemi

MPQ2222 by Onsemi

The Onsemi MPQ2222 is a NPN BJT with 4 elements, hFE of 30, and VCE of 30V. Ideal for power applications, it operates b/w -55 to 150 °C with IC up to 0.5A. Its silicon construction and fT of 200MHz make it suitable for various electronic designs.

Median Price

$5.000

Lifecycle Status

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1k+

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TEDSS.com

USA . 50 parts In-Stock

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Ace Electronics

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Forefront Electronics and Design

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American Microsemiconductor Inc.

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Digital Electronic Gebert Verwaltungs UG

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Cogito LLC

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LittleDiode

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Flex Direct, LLC

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Corohmni

South Africa . 231 parts In-Stock

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Problanco Electronics

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Overview

Elevate your power management game with the MPQ2222 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their Power Bipolar Junction Transistors (BJT). The MPQ2222 offers a seamless integration with its 4-element configuration, making it perfect for a wide range of applications. From amplifiers to voltage regulators, this NPN transistor guarantees optimal performance and efficiency. Trust Onsemi to provide you with a superior product that meets all your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, ensuring reliable performance and longevity.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for various electronic applications.

Configuration: SEPARATE, 4 ELEMENTS

Having separate 4 elements allows for more precise control and customization in circuit design.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand heat and operate efficiently in demanding environments.

Maximum Collector-Emitter Voltage: 30 V

The high collector-emitter voltage rating allows for safe operation in high voltage applications.

Nominal Transition Frequency (fT): 200 MHz

The high transition frequency indicates good high-frequency performance, suitable for applications requiring fast switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MPQ2222 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-116

JESD-30 Code:

R-PDIP-T14

No. of Elements:

4

No. of Terminals:

14

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPQ2222 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

NSN

5961-00-622-0778, 5961006220778

NIIN

006220778

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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