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MPQ2907A

Onsemi

MPQ2907A by Onsemi

MPQ2907A by Onsemi is a PNP power bipolar junction transistor (BJT) with 4 separate elements. It has a max collector-emitter voltage of 60V and a max collector current of 0.6A. This transistor is commonly used for switching applications in various electronic circuits.

Median Price

$6.150

Lifecycle Status

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27

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1k+

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Component Electronics Inc.

Canada . 32 parts In-Stock

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Mentor Electronics Marketing, LLC

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NexGen Digital

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Holdelec - ElecDif-Pro

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Connector Distribution Corp

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Electronics Depot

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Mil-Aero Solutions, Inc.

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Semi Source

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Bristol Electronics

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Right Parts Inc.

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Prism Electronics

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LittleDiode

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Electronic Expediters

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MISTER SPROCKETS

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NAC Semi

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Corohmni

South Africa . 426 parts In-Stock

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AZTECH Wire

Italy . 316 parts In-Stock

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Ampacity Inc.

Singapore . 1,542 parts In-Stock

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SupplyDigital Components

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Bastille Electronics

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Perfect Parts

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Overview

Enhance your power switching capabilities with the MPQ2907A by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability. The MPQ2907A is a PNP power bipolar junction transistor that offers excellent performance in a wide range of applications. Its separate configuration with 4 elements provides enhanced flexibility and efficiency. With a maximum collector-emitter voltage of 60V and a maximum collector current of 0.6A, this transistor can handle demanding tasks with ease. The MPQ2907A's compact rectangular package shape and through-hole terminal form make it easy to integrate into your designs. Experience the value, benefits, and advantages that the MPQ2907A brings to your projects. Upgrade your power switching capabilities today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, offering versatility in circuit design.

Configuration: SEPARATE, 4 ELEMENTS

Allows for independent control of each element, offering more flexibility in circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing reliable performance in such scenarios.

Package Shape: RECTANGULAR

Easily mountable and fits well in compact spaces, making it suitable for various electronic devices.

Terminal Form: THROUGH-HOLE

Enables easy insertion and soldering onto a PCB, simplifying the manufacturing process.

No. of Elements: 4

Offers multiple elements in a single package, reducing the overall PCB footprint and cost.

No. of Terminals: 14

Provides ample connection points for versatility in circuit connections.

Package Style (Meter): IN-LINE

Streamlined design for easier integration into circuit layouts.

Minimum DC Current Gain (hFE): 50

Ensures reliable amplification of current in the circuit.

Maximum Collector-Emitter Voltage: 60 V

Supports higher voltage applications, expanding the range of compatible circuits.

Transistor Element Material: SILICON

Provides high performance and reliability due to silicon's superior properties.

Maximum Collector Current (IC): 0.6 A

Capable of handling moderate current levels, suitable for a wide range of applications.

Terminal Position: DUAL

Offers redundancy and flexibility in circuit connections.

Nominal Transition Frequency (fT): 200 MHz

Capable of high-frequency switching operations, making it suitable for fast-switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MPQ2907A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-116

JESD-30 Code:

R-PDIP-T14

No. of Elements:

4

No. of Terminals:

14

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPQ2907A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

NSN

5961-01-452-9485, 5961014529485

NIIN

014529485

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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