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MMDF6N03HDR2

Onsemi

MMDF6N03HDR2 by Onsemi

MMDF6N03HDR2 by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage and 6A max drain current. Ideal for switching applications, it features separate elements with built-in diode in a small outline package style. Operating in enhancement mode, this MOSFET has a max power dissipation of 2W at 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

9

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1k+

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R&J Components

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Cyclops Electronics Ltd

UK . 2,500 parts In-Stock

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Component Sense

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A2Z Electronics, Inc.

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Speed Components Ltd

Israel . 2,000 parts In-Stock

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Digiode

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Vyrian

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Prism Electronics

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SupplyDigital Components

Austria . 6,583 parts In-Stock

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Problanco Electronics

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Corphita

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Kulean Microsystems

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UHIMA Technologies

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Overview

Unlock the potential of your electronics with the MMDF6N03HDR2 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Field Effect Transistors that are perfect for switching applications. With 2 elements and a built-in diode, this N-CHANNEL transistor offers enhanced performance and reliability. Its compact design and high power dissipation make it ideal for a wide range of electronic devices. Experience the value and benefits of Onsemi's cutting-edge technology with the MMDF6N03HDR2.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/epoxy body material provides durability and helps protect the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally have higher mobility and lower resistivity, making them suitable for high-speed switching applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Having 2 separate elements with a built-in diode allows for more versatile circuit design and easier integration into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such operations.

Surface Mount: YES

Surface mount capability makes it easier to integrate the transistor onto circuit boards, saving space and simplifying manufacturing processes.

Minimum DS Breakdown Voltage: 30 V

A minimum breakdown voltage of 30V ensures compatibility with a wide range of applications and operating conditions.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy placement and secure mounting on circuit boards.

Terminal Form: GULL WING

Gull wing terminal form provides easy soldering and secure connection to the circuit board.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for easy control of the transistor, making it suitable for various switching applications.

No. of Elements: 2

Having 2 elements provides redundancy and flexibility in circuit design, allowing for parallel operation or separate functions.

Maximum Drain Current (Abs) (ID): 6 A

With a maximum drain current of 6A, this transistor can handle high current loads, making it suitable for power applications.

No. of Terminals: 8

Having 8 terminals allows for versatile connections and integration into complex circuit designs.

Maximum Power Dissipation (Abs): 2 W

A maximum power dissipation of 2W ensures the transistor can operate efficiently without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact circuit designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides high performance and reliability in a variety of applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can handle high-temperature environments without compromising performance.

Transistor Element Material: SILICON

Silicon material ensures high conductivity and durability, making the transistor reliable and long-lasting.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and corrosion resistance, ensuring secure connections and longevity.

Maximum Drain-Source On Resistance: 0.035 ohm

Low drain-source on resistance of 0.035 ohm ensures minimal power loss and efficient operation of the transistor.

Terminal Position: DUAL

Dual terminal position allows for versatile connections and easy integration into circuit designs.

Peak Reflow Temperature °C: 235

Peak reflow temperature of 235 °C ensures secure soldering and reliability during manufacturing processes.

Maximum Feedback Capacitance (Crss): 135 pF

Low feedback capacitance of 135 pF minimizes signal distortion and interference, ensuring clear and accurate operation of the transistor.

Technical Specifications

Small Signal Field Effect Transistors (FET) MMDF6N03HDR2 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

6 A

Maximum Drain Current (ID):

6 A

Maximum Drain-Source On Resistance:

.035 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

135 pF

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Powers

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MMDF6N03HDR2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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