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MMDFS3P303R2

Onsemi

MMDFS3P303R2 by Onsemi

MMDFS3P303R2 by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, 3.5A max drain current, and 0.1 ohm max on resistance. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package suitable for surface mount technology.

Median Price

$0.225

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 77,500 parts In-Stock

1+ parts

-

100+ parts

$0.225

1k+ parts

$0.186

10k+ parts

$0.166

77,500

-

$0.225

$0.186

$0.166

DigiKey

USA . 77,500 parts In-Stock

1+ parts

-

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$0.280

77,500

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-

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$0.280

Verical

USA . 65,000 parts In-Stock

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$0.208

65,000

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$0.208

Distributors (In-Stock)

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Vyrian

USA . 50 parts In-Stock

1+ parts

$0.151

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50

$0.151

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Digiode

USA . 678 parts In-Stock

1+ parts

$0.175

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678

$0.175

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Cyclops Electronics Ltd

UK . 2,500 parts In-Stock

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2,500

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Distributors (Availability)

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Corohmni

South Africa . 191 parts In-Stock

1+ parts

$0.151

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191

$0.151

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Corphita

USA . 1,158 parts In-Stock

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$0.166

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1,158

$0.166

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Continental Prestige Electronics

USA . 77,500 parts In-Stock

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$0.169

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77,500

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$0.169

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QUARKTWIN TECHNOLOGY LTD

USA . 25,912 parts In-Stock

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Kulean Microsystems

USA . 7,307 parts In-Stock

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TANS Electronics

Latvia . 6,214 parts In-Stock

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Problanco Electronics

Mexico . 3,550 parts In-Stock

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Metaverse IC Inc.

Canada . 3,410 parts In-Stock

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3,410

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Kepictronics

USA . 3,000 parts In-Stock

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3,000

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Assy Fe

Spain . 2,500 parts In-Stock

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2,500

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SupplyDigital Components

Austria . 1,076 parts In-Stock

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1,076

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UHIMA Technologies

Türkiye . 495 parts In-Stock

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495

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Overview

Unleash the power of innovation with the MMDFS3P303R2 by Onsemi. Crafted with precision and expertise, this small signal FET offers unmatched quality and reliability. Perfect for switching applications, the single configuration with built-in diode ensures seamless performance. With a maximum drain current of 3.5 A and operating mode in enhancement mode, this transistor is designed to exceed expectations. Experience the value and benefits of top-notch technology with Onsemi's MMDFS3P303R2. Elevate your projects to new heights with this cutting-edge solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: P-CHANNEL

Ideal for applications where a negative voltage is required, offering versatility in circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Minimum DS Breakdown Voltage: 30 V

Can handle higher voltages without breakdown, making it suitable for applications with varying voltage requirements.

Maximum Drain Current (Abs) (ID): 3.5 A

Capable of handling higher current loads, making it suitable for applications requiring higher power output.

Maximum Power Dissipation (Abs): 2 W

Can dissipate heat effectively, preventing overheating and ensuring stable performance even under high power conditions.

Maximum Operating Temperature: 150 °C

Can operate at higher temperatures without performance degradation, suitable for demanding industrial environments.

Maximum Drain-Source On Resistance: 0.1 ohm

Low on-resistance ensures minimal power loss and efficient operation, making it a cost-effective choice for high-performance applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) MMDFS3P303R2 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

3.5 A

Maximum Drain Current (ID):

3.5 A

Maximum Drain-Source On Resistance:

.1 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MMDFS3P303R2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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