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MMDF2P02HDR2

Onsemi

MMDF2P02HDR2 by Onsemi

MMDF2P02HDR2 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.3A Drain Current, ideal for SWITCHING applications. It features a RECTANGULAR package shape, GULL WING terminals, and operates in ENHANCEMENT MODE. With a max power dissipation of 2W and operating temperature range from -55 to 150 °C, it offers reliable performance in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Atlantic Semiconductor

USA . 7,716 parts In-Stock

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Bristol Electronics

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Digiode

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ACDS - Activité Composants Distribution Service

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Dan-Mar Components

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Vyrian

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Quantum Digital Technology

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TANS Electronics

Latvia . 7,748 parts In-Stock

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SupplyDigital Components

Austria . 6,417 parts In-Stock

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Kepictronics

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Kulean Microsystems

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GreenTree Electronics

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Problanco Electronics

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Authorized Procurement Solutions

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Corphita

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South Africa . 454 parts In-Stock

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UHIMA Technologies

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Overview

Discover the MMDF2P02HDR2 by Onsemi, a top-quality P-CHANNEL Small Signal Field Effect Transistor with built-in diode. With its enhanced switching capabilities and high reliability, this transistor is perfect for various applications in electronics. Onsemi's reputation for excellence ensures that you're getting a superior product that delivers exceptional performance. Trust in the value and benefits that the MMDF2P02HDR2 brings to your projects, providing you with advanced technology and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the internal components of the transistor.

Polarity or Channel Type: P-CHANNEL

Suitable for applications where P-channel transistors are required.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Offers versatility and functionality with built-in diode for specific circuit requirements.

Transistor Application: SWITCHING

Ideal for switching applications due to its fast response and low power consumption.

Surface Mount: YES

Easy to mount on circuit boards, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 20 V

Provides a safe operating range and protection against voltage spikes.

Package Shape: RECTANGULAR

Easily fits into standard footprint on circuit boards.

Terminal Form: GULL WING

Allows for easy soldering and secure connection.

Operating Mode: ENHANCEMENT MODE

Enhances performance in certain applications where an enhancement mode transistor is needed.

Maximum Drain Current (Abs) (ID): 3.3 A

Capable of handling high current loads.

No. of Terminals: 8

Provides multiple connection points for circuit integration.

Maximum Power Dissipation (Abs): 2 W

Can dissipate heat effectively, ensuring stable operation under load.

Package Style (Meter): SMALL OUTLINE

Compact package size for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high performance and reliability in various circuit designs.

Maximum Operating Temperature: 150 °C

Can operate in a wide temperature range, suitable for various environments.

Transistor Element Material: SILICON

Silicon-based material provides good electrical properties and reliability.

Minimum Operating Temperature: -55 °C

Capable of functioning in low-temperature environments.

Terminal Finish: TIN LEAD

Provides a reliable and durable terminal finish for soldering.

Maximum Drain-Source On Resistance: 0.16 ohm

Low resistance contributes to efficient power transfer and minimal heat generation.

Terminal Position: DUAL

Offers flexibility in circuit connection options.

Peak Reflow Temperature °C: 235

Can withstand high temperatures during assembly processes.

Maximum Feedback Capacitance (Crss): 232 pF

Low feedback capacitance for improved signal integrity.

Technical Specifications

Small Signal Field Effect Transistors (FET) MMDF2P02HDR2 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

3.3 A

Maximum Drain Current (ID):

3.3 A

Maximum Drain-Source On Resistance:

.16 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

232 pF

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MMDF2P02HDR2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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