Loading...

MMBZ5248ELT3G

Onsemi

MMBZ5248ELT3G by Onsemi

MMBZ5248ELT3G by Onsemi is a Zener diode with a 18V nominal reference voltage and 5% max voltage tolerance. It operates at up to 150 °C, has a max power dissipation of 0.225W, and features a small outline package style for surface mount applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,351 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,351

-

-

-

-

Digiode

USA . 1,785 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,785

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 918 parts In-Stock

1+ parts

$14.870

100+ parts

-

1k+ parts

-

10k+ parts

-

918

$14.870

-

-

-

Kulean Microsystems

USA . 7,010 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,010

-

-

-

-

TANS Electronics

Latvia . 3,918 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,918

-

-

-

-

Problanco Electronics

Mexico . 1,983 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,983

-

-

-

-

Corphita

USA . 1,566 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,566

-

-

-

-

SupplyDigital Components

Austria . 1,521 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,521

-

-

-

-

UHIMA Technologies

Türkiye . 447 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

447

-

-

-

-

Corohmni

South Africa . 278 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

278

-

-

-

-

Overview

Experience the superior quality and reliability of Onsemi's MMBZ5248ELT3G Zener Diode. This high-performance component is designed for a wide range of applications, offering customers unmatched value and benefits. With a maximum voltage tolerance of 5% and a nominal reference voltage of 18V, this Zener diode ensures precise and stable operation. Trust Onsemi's expertise in semiconductor manufacturing to deliver cutting-edge technology that meets your needs with efficiency and excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the diode and ensures durability.

Working Test Current: 7 mA

Suitable for various electronic applications requiring low current operation.

Surface Mount: YES

Easy to mount on PCBs, saving space and facilitating automated assembly.

Maximum Voltage Tolerance: 5 %

Ensures consistent performance under varying voltage conditions.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, increasing overall reliability.

Maximum Dynamic Impedance: 21 ohm

Provides stable impedance characteristics for better performance.

Terminal Finish: TIN

Helps in ensuring good solderability and reliable electrical connections.

Maximum Power Dissipation: 0.225 W

Can handle moderate power levels without overheating.

Diode Type: ZENER DIODE

Specifically designed for voltage regulation applications.

Nominal Reference Voltage: 18 V

Provides a stable reference voltage for the circuit.

Technical Specifications

Zener Diodes MMBZ5248ELT3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

21 ohm

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Nominal Reference Voltage:

18 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

7 mA

Trade Compliance

MMBZ5248ELT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20