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MMBZ5256BLT1G

Onsemi

MMBZ5256BLT1G by Onsemi

MMBZ5256BLT1G by Onsemi is a Zener diode with a 30V nominal reference voltage and 5% max voltage tolerance. It operates b/w -65 to 150 °C, has a max power dissipation of 0.225W, and features a dual terminal position for surface mount applications.

Median Price

$0.036

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 190,128 parts In-Stock

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Arrow

USA . 4,633 parts In-Stock

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4,633

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$0.032

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$0.016

DigiKey

USA . 59,222 parts In-Stock

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$0.170

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$0.063

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Mouser Electronics

USA . 15,436 parts In-Stock

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$0.064

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$0.041

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$0.027

15,436

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$0.064

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Verical

USA . 282,000 parts In-Stock

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Master Electronics

USA . 282,000 parts In-Stock

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Newark

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Chip1Stop

Japan . 56,624 parts In-Stock

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Flip Electronics (Authorized)

USA . 50,925 parts In-Stock

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Digiode

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Nova Conductors

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Freelance Electronics

USA . 1,986 parts In-Stock

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TME

Poland . 5,730 parts In-Stock

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$0.100

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$0.025

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$0.017

Bristol Electronics

USA . 11,433 parts In-Stock

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IBS Electronics

USA . 327,000 parts In-Stock

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NAC Semi

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Component Sense

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Vyrian

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Chip Stock

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Dan-Mar Components

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PC Components Company LLC

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North Shore Components

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GSS - Global Semi Support

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Cyclops Electronics Ltd

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ACDS - Activité Composants Distribution Service

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Ampacity Inc.

Singapore . 55,324 parts In-Stock

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Corohmni

South Africa . 64 parts In-Stock

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Semicontronic

India . 44,588 parts In-Stock

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Corphita

USA . 788 parts In-Stock

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Aranea Global

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Argo Parts USA

USA . 2,206 parts In-Stock

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Aztec Data Supply Inc.

USA . 3,166 parts In-Stock

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Continental Prestige Electronics

USA . 3,151 parts In-Stock

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Component Stockers USA

USA . 178,494 parts In-Stock

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Perfect Parts

USA . 136,549 parts In-Stock

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Kepictronics

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Metaverse IC Inc.

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iodParts Technologies Inc.

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Lixinc

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SupplyDigital Components

Austria . 7,936 parts In-Stock

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Authorized Procurement Solutions

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QUARKTWIN TECHNOLOGY LTD

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TANS Electronics

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Problanco Electronics

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Kulean Microsystems

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Futuretech Components

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UHIMA Technologies

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Overview

Discover the power of the MMBZ5256BLT1G Zener Diode by Onsemi - a top-quality product designed for precision and reliability. With Onsemi's reputation for excellence in manufacturing, this Zener Diode offers unmatched performance and durability. Ideal for a wide range of applications, this diode provides stable voltage regulation with minimal power dissipation. Experience peace of mind knowing your electronics are protected with the MMBZ5256BLT1G, delivering value and efficiency to customers seeking superior quality components for their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making it suitable for a wide range of applications.

Working Test Current: 4.2 mA

The working test current of 4.2 mA indicates reliable performance under typical operating conditions.

Surface Mount: YES

Being surface mountable allows for easy and efficient integration into circuit boards, saving space and facilitating automated assembly processes.

Maximum Voltage Tolerance: 5 %

The tight maximum voltage tolerance of 5% ensures stable and consistent performance in voltage regulation applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this zener diode can withstand elevated temperatures without compromising its functionality.

Nominal Reference Voltage: 30 V

The nominal reference voltage of 30V meets the requirements of many common electronic circuits, providing reliable voltage regulation.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that current flows in one direction only, making it suitable for applications requiring a one-way current flow.

Technical Specifications

Zener Diodes MMBZ5256BLT1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

49 ohm

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Nominal Reference Voltage:

30 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

4.2 mA

Trade Compliance

MMBZ5256BLT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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