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MMBZ5257BLT1G

Onsemi

MMBZ5257BLT1G by Onsemi

MMBZ5257BLT1G by Onsemi is a Zener diode with 33V nominal voltage, 5% voltage tolerance, and 58 ohm dynamic impedance. It is used in applications requiring precise voltage regulation, such as power supplies and signal conditioning circuits.

Median Price

$0.032

Lifecycle Status

Suppliers In-Stock

34

In-Stock Inventory

1k+

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Arrow

USA . 51,258 parts In-Stock

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Mouser Electronics

USA . 115,316 parts In-Stock

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Rochester

USA . 330,830 parts In-Stock

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DigiKey

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Farnell

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Verical

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Master Electronics

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Canada . 72,000 parts In-Stock

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Chip1Stop

Japan . 52,820 parts In-Stock

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Avnet

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Element14

Singapore . 33,207 parts In-Stock

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Newark

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Digiode

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TME

Poland . 35,363 parts In-Stock

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IBS Electronics

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NAC Semi

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PC Components Company LLC

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Semicontronic

India . 90,304 parts In-Stock

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Ampacity Inc.

Singapore . 90,047 parts In-Stock

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Corohmni

South Africa . 209 parts In-Stock

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Corphita

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Component Stockers USA

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Argo Parts USA

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Aztec Data Supply Inc.

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Continental Prestige Electronics

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Perfect Parts

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Overview

Elevate your electronic designs with the MMBZ5257BLT1G Zener diode by Onsemi. Crafted with precision and quality, this diode offers reliable voltage regulation and protection for a variety of applications. From automotive to industrial electronics, this small outline package delivers exceptional performance and efficiency. Trust in Onsemi's expertise and choose the MMBZ5257BLT1G for unparalleled value and peace of mind in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the diode.

Working Test Current: 3.8 mA

Allows for reliable and consistent performance under normal operating conditions.

Surface Mount: YES

Facilitates easy and efficient installation on circuit boards.

Maximum Voltage Tolerance: 5 %

Ensures accurate and stable voltage regulation.

Maximum Operating Temperature: 150 °C

Can handle high temperature environments without compromising performance.

Nominal Reference Voltage: 33 V

Suitable for applications requiring a stable reference voltage of 33 volts.

Technical Specifications

Zener Diodes MMBZ5257BLT1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

58 ohm

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Nominal Reference Voltage:

33 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

3.8 mA

Trade Compliance

MMBZ5257BLT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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