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MMBT5962

Onsemi

MMBT5962 by Onsemi

MMBT5962 by Onsemi is a NPN BJT transistor with 600 min hFE, 45V VCEO, and 100MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting. With a max power dissipation of 0.35W and operating temperature of 150°C, it offers reliable performance in various electronic circuits.

Median Price

$0.035

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 1,000 parts In-Stock

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$0.035

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$0.033

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$0.030

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1,000

$0.035

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Verical

USA . 24,000 parts In-Stock

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Digiode

USA . 637 parts In-Stock

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$0.033

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637

$0.033

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Nova Conductors

Japan . 500 parts In-Stock

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$0.104

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500

$0.104

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Vyrian

USA . 16,431 parts In-Stock

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Chip Stock

USA . 4,655 parts In-Stock

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South Electronics

USA . 840 parts In-Stock

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Global Solutions Electronics Company

USA . 840 parts In-Stock

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Anansix

USA . 638 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 35 parts In-Stock

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Semicontronic

India . 12,150 parts In-Stock

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$0.030

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$0.029

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Corphita

USA . 802 parts In-Stock

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$0.032

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802

$0.032

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Corohmni

South Africa . 222 parts In-Stock

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$0.035

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Ampacity Inc.

Singapore . 16,229 parts In-Stock

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$0.065

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Aranea Global

USA . 500 parts In-Stock

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$0.102

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$0.098

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Continental Prestige Electronics

USA . 6,776 parts In-Stock

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Argo Parts USA

USA . 190 parts In-Stock

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Perfect Parts

USA . 49,844 parts In-Stock

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Robosynatics

Brazil . 11,876 parts In-Stock

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Lucentia Tech

USA . 11,876 parts In-Stock

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$1.658

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$1.624

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$1.624

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$1.624

SupplyDigital Components

Austria . 8,324 parts In-Stock

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Problanco Electronics

Mexico . 5,392 parts In-Stock

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Kepictronics

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RC Electronics

USA . 2,700 parts In-Stock

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TANS Electronics

Latvia . 935 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 572 parts In-Stock

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Microchip USA

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Kulean Microsystems

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Overview

Enhance your electronic projects with the high-quality MMBT5962 NPN transistor by Onsemi. Designed for small signal applications, this transistor offers reliable amplification in a compact package. With a minimum DC current gain of 600 and a maximum operating temperature of 150°C, this transistor provides exceptional performance. Whether you're working on audio amplifiers or sensor circuits, the MMBT5962 delivers the value, benefits, and advantages you need to bring your designs to life. Trust Onsemi's reputation for excellence and choose the MMBT5962 for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: NPN

NPN polarity allows for easy integration and compatibility with other NPN components in circuit design.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to implement in various electronic projects.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in signal amplification.

Surface Mount: YES

Surface mount capability provides easy installation and saves space on PCBs, ideal for compact electronic devices.

Maximum Power Dissipation: 0.35 W

With a relatively high maximum power dissipation, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 600

High minimum DC current gain ensures consistent and reliable amplification of input signals.

Maximum Collector-Emitter Voltage: 45 V

With a high maximum collector-emitter voltage, this transistor can withstand higher voltage levels in circuits.

Maximum Operating Temperature: 150 °C

Operates efficiently at temperatures up to 150°C, suitable for a wide range of environmental conditions.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency allows for fast switching speeds and efficient signal processing in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBT5962 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

600

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMBT5962 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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