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MLD2N06CLG

Onsemi

MLD2N06CLG by Onsemi

MLD2N06CLG by Onsemi is a N-CHANNEL Power FET with 58V DS Breakdown Voltage and 40W Power Dissipation. Ideal for SWITCHING applications, it features a built-in BIPOLAR TRANSISTOR, DIODE, and RESISTOR in a PLASTIC/EPOXY package. Operating at up to 150 °C, it offers 0.4 ohm Drain-Source Resistance and 2A Drain Current.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,185 parts In-Stock

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Vyrian

USA . 2,035 parts In-Stock

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Problanco Electronics

Mexico . 8,288 parts In-Stock

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Kulean Microsystems

USA . 6,578 parts In-Stock

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SupplyDigital Components

Austria . 6,207 parts In-Stock

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TANS Electronics

Latvia . 3,035 parts In-Stock

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Corphita

USA . 974 parts In-Stock

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UHIMA Technologies

Türkiye . 416 parts In-Stock

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Corohmni

South Africa . 194 parts In-Stock

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Overview

Elevate your electronic designs with the MLD2N06CLG by Onsemi, a top-tier manufacturer known for delivering high-quality Power FETs. This N-CHANNEL transistor boasts a built-in bipolar transistor, diode, and resistor for enhanced functionality in switching applications. With a minimum DS breakdown voltage of 58V and a maximum drain current of 2A, this transistor offers unmatched reliability and performance. Whether you're working on power supplies, LED lighting, or motor control systems, the MLD2N06CLG provides the efficiency and precision you need to bring your projects to the next level. Upgrade your designs today with Onsemi's superior technology.

Feature Benefit Bullets

Package Body Material: Plastic/Epoxy

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-Channel

Offers efficient switching capabilities in electronic circuits, making it suitable for various applications.

Configuration: Single with built-in bipolar transistor, diode and resistor

Simplifies circuit design and reduces the need for additional components, saving space and cost.

Transistor Application: Switching

Designed specifically for switching operations, ensuring high performance and reliability in switching applications.

Surface Mount: Yes

Facilitates easy and convenient mounting on circuit boards, saving time and effort during assembly.

Minimum DS Breakdown Voltage: 58V

Withstands high voltage levels, making it suitable for use in power management applications.

Package Shape: Rectangular

Allows for compact and efficient packaging, optimizing space utilization in electronic devices.

Operating Mode: Enhancement Mode

Operates in enhancement mode for improved performance and efficiency in electronic circuits.

Avalanche Energy Rating (EAS): 80mJ

Provides protection against avalanche breakdown, ensuring the safe operation of the transistor.

Maximum Power Dissipation (Abs): 40W

Capable of handling high power dissipation, making it suitable for demanding applications.

Package Style (Meter): Small Outline

Offers a compact and space-saving design, ideal for applications with limited space availability.

Field Effect Transistor Technology: Metal-Oxide Semiconductor

Utilizes advanced MOSFET technology for enhanced performance and efficiency in electronic circuits.

Maximum Operating Temperature: 150 °C

Operates efficiently at high temperatures, making it suitable for industrial and automotive applications.

Transistor Element Material: Silicon

Utilizes silicon material known for its reliability and durability in electronic components.

Terminal Finish: Matte Tin (Sn)

Provides a reliable and durable terminal finish, ensuring good electrical conductivity and solderability.

Maximum Drain Current (ID): 2A

Capable of handling high drain currents, making it suitable for power switching applications.

Maximum Drain-Source On Resistance: 0.4 ohm

Offers low resistance for efficient power switching and reduced power loss in electronic circuits.

Terminal Position: Single

Simplifies the connection process and ensures proper orientation during installation.

Case Connection: Drain

Provides a convenient connection point for the drain terminal, facilitating easy integration into circuit designs.

Maximum Time At Peak Reflow Temperature (s): 40

Ensures proper soldering and reflow processes, maintaining the reliability of the component.

Peak Reflow Temperature °C: 260

Withstands high reflow temperatures, ensuring proper soldering and reliability in manufacturing processes.

Technical Specifications

Power Field Effect Transistors (FET) MLD2N06CLG attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE, OVERVOLTAGE CLAMPED PROTECTION

Avalanche Energy Rating (EAS):

80 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

58 V

Maximum Drain Current (ID):

2 A

Maximum Drain-Source On Resistance:

.4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MLD2N06CLG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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