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MKP1V120

Onsemi

MKP1V120 by Onsemi

The Onsemi MKP1V120 is a SIDAC diode with 4A peak current, 110V breakdown voltage, and 100mA holding current. It is used as a trigger device in applications requiring AC switching. With an operating temperature range of -40 to 125 °C, it features an isolated axial package design for reliable performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,115 parts In-Stock

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Vyrian

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TANS Electronics

Latvia . 4,889 parts In-Stock

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SupplyDigital Components

Austria . 4,482 parts In-Stock

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Problanco Electronics

Mexico . 4,001 parts In-Stock

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Kulean Microsystems

USA . 2,978 parts In-Stock

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Corphita

USA . 611 parts In-Stock

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UHIMA Technologies

Türkiye . 437 parts In-Stock

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Corohmni

South Africa . 209 parts In-Stock

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Overview

Unleash the power of innovation with the MKP1V120 by Onsemi, a top-quality Silicone Diode For Alternating Current (SIDAC) that offers unmatched reliability and performance. Designed with precision and expertise by Onsemi, this SIDAC is perfect for a wide range of applications, providing customers with exceptional value and benefits. Whether you're looking to improve efficiency, enhance safety, or boost productivity, the MKP1V120 delivers on all fronts. Trust in Onsemi's reputation for excellence and choose the MKP1V120 for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy material provides durability and protection for the diode, ensuring a longer lifespan and reliability.

Configuration: SINGLE

Single configuration simplifies the design and installation process, making it more user-friendly.

Non Repetitive Peak On-state Current: 4 A

High peak on-state current allows the diode to handle large current spikes, making it suitable for high-power applications.

Nominal Holding Current: 100 mA

Stable holding current ensures the diode remains in the on-state, providing consistent performance.

Minimum Breakdown Voltage: 110 V

High breakdown voltage protects the diode from voltage surges, enhancing its reliability in different operating conditions.

Package Shape: ROUND

Round shape allows for easy and secure mounting in various applications.

Terminal Form: WIRE

Wire terminals provide a reliable connection and ease of installation.

Maximum Operating Temperature: 125 °C

High operating temperature range ensures the diode can withstand a wide range of environmental conditions.

Minimum Operating Temperature: -40 °C

Low operating temperature ensures the diode can function in cold environments without loss of performance.

Terminal Finish: TIN LEAD

Tin lead finish on the terminals improves conductivity and solderability, ensuring a secure connection.

Maximum Holding Current: 100 mA

Maximum holding current capability ensures the diode remains in the on-state under specified conditions.

Maximum Breakdown Voltage: 130 V

High maximum breakdown voltage provides an extra margin of safety, protecting the diode from voltage transients.

Technical Specifications

Silicone Diode For Alternating Current (SIDAC) MKP1V120 attributes and parameters. Explore more Silicone Diode For Alternating Current (SIDAC) devices from Onsemi

Specs

Maximum Breakdown Voltage:

130 V

Minimum Breakdown Voltage:

110 V

Case Connection:

Configuration:

Maximum Holding Current:

100 mA

Nominal Holding Current:

100 mA

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e0

Non Repetitive Peak On-state Current:

4 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Qualification:

Not Qualified

Sub-Category:

Silicon Surge Protectors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

Trigger Device Type:

Trade Compliance

MKP1V120 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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