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MKP1V240

Onsemi

MKP1V240 by Onsemi

The Onsemi MKP1V240 is a SIDAC diode with 4A peak current, 220V breakdown voltage, and 100mA holding current. It is used in trigger devices, has a temperature range of -40 to 125 °C, and features an isolated case connection.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,363 parts In-Stock

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Vyrian

USA . 1,090 parts In-Stock

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Problanco Electronics

Mexico . 8,306 parts In-Stock

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SupplyDigital Components

Austria . 7,619 parts In-Stock

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Kulean Microsystems

USA . 7,383 parts In-Stock

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TANS Electronics

Latvia . 6,890 parts In-Stock

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Corphita

USA . 844 parts In-Stock

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Corohmni

South Africa . 290 parts In-Stock

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UHIMA Technologies

Türkiye . 227 parts In-Stock

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Overview

Discover the unparalleled performance and reliability of the MKP1V240 SIDAC diode by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-quality products that exceed expectations. The MKP1V240 is perfect for a wide range of applications, offering customers exceptional value with its high peak on-state current, reliable breakdown voltage, and superior temperature resistance. Choose the MKP1V240 for your next project and experience the difference that Onsemi's innovative technology can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the diode lightweight and durable, suitable for a variety of applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and installation process.

Non Repetitive Peak On-state Current: 4 A

High non-repetitive peak on-state current allows for reliable performance in demanding AC circuits.

Nominal Holding Current: 100 mA

The nominal holding current ensures stable operation once the diode is triggered.

Minimum Breakdown Voltage: 220 V

The minimum breakdown voltage of 220 V provides a high level of protection against voltage spikes.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C allows the diode to function in a wide range of environmental conditions.

Trigger Device Type: SIDAC

SIDAC trigger device type enables fast switching and reliable performance in AC circuits.

Terminal Finish: TIN

Tin terminal finish ensures good electrical conductivity and corrosion resistance.

Maximum Breakdown Voltage: 250 V

The maximum breakdown voltage of 250 V provides an additional margin of safety in high voltage applications.

Reference Standard: UL RECOGNIZED

UL Recognized certification ensures that the diode meets industry safety and quality standards.

Technical Specifications

Silicone Diode For Alternating Current (SIDAC) MKP1V240 attributes and parameters. Explore more Silicone Diode For Alternating Current (SIDAC) devices from Onsemi

Specs

Maximum Breakdown Voltage:

250 V

Minimum Breakdown Voltage:

220 V

Case Connection:

Configuration:

Maximum Holding Current:

100 mA

Nominal Holding Current:

100 mA

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Non Repetitive Peak On-state Current:

4 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

WIRE

Terminal Position:

Trigger Device Type:

Trade Compliance

MKP1V240 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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