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MKP1V120RLG

Onsemi

MKP1V120RLG by Onsemi

MKP1V120RLG by Onsemi is a Silicone Diode For Alternating Current (SIDAC) with 4A peak current, 110V breakdown voltage, and 100mA holding current. It is used as a trigger device in applications requiring high reliability and temperature range from -40 to 125 °C.

Median Price

$0.304

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 102,000 parts In-Stock

1+ parts

$0.131

100+ parts

-

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102,000

$0.131

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Chip1Stop

Japan . 95,814 parts In-Stock

1+ parts

$0.764

100+ parts

$0.490

1k+ parts

$0.482

10k+ parts

-

95,814

$0.764

$0.490

$0.482

-

TTI

USA . 105,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.476

105,000

-

-

-

$0.476

Verical

USA . 83,759 parts In-Stock

1+ parts

-

100+ parts

$0.096

1k+ parts

$0.091

10k+ parts

$0.088

83,759

-

$0.096

$0.091

$0.088

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,230 parts In-Stock

1+ parts

$0.431

100+ parts

-

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1,230

$0.431

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Digiode

USA . 1,916 parts In-Stock

1+ parts

$0.494

100+ parts

-

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1,916

$0.494

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-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 188,777 parts In-Stock

1+ parts

$0.270

100+ parts

$0.270

1k+ parts

$0.270

10k+ parts

$0.260

188,777

$0.270

$0.270

$0.270

$0.260

Corohmni

South Africa . 291 parts In-Stock

1+ parts

$0.431

100+ parts

-

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291

$0.431

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Corphita

USA . 1,946 parts In-Stock

1+ parts

$0.468

100+ parts

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1,946

$0.468

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Kepictronics

USA . 41,000 parts In-Stock

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41,000

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Perfect Parts

USA . 22,400 parts In-Stock

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22,400

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QUARKTWIN TECHNOLOGY LTD

USA . 22,133 parts In-Stock

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22,133

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SupplyDigital Components

Austria . 7,504 parts In-Stock

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7,504

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Problanco Electronics

Mexico . 4,401 parts In-Stock

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4,401

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Kulean Microsystems

USA . 4,236 parts In-Stock

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4,236

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TANS Electronics

Latvia . 3,878 parts In-Stock

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3,878

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

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1,000

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UHIMA Technologies

Türkiye . 364 parts In-Stock

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364

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Overview

Discover the power of the MKP1V120RLG Silicone Diode for Alternating Current by Onsemi. With a reputation for excellence in manufacturing, Onsemi delivers top-quality products that exceed industry standards. The MKP1V120RLG is perfect for a wide range of applications, offering reliable performance and efficiency. Experience the benefits of this SIDAC trigger device with its high breakdown voltage and low holding current. Trust Onsemi to provide you with the value and quality you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various applications.

Configuration: SINGLE

Simplicity in design allows for easy installation and use.

Non Repetitive Peak On-state Current: 4 A

Can handle high peak current without damage, ensuring reliability.

Nominal Holding Current: 100 mA

Consistent holding current ensures stable operation of the diode.

Minimum Breakdown Voltage: 110 V

Offers protection against overvoltage conditions, enhancing safety.

Package Shape: ROUND

Compact and versatile shape for easy integration into various circuit designs.

Terminal Form: WIRE

Simplified terminal design for convenient connection in applications.

No. of Terminals: 2

Basic two-terminal configuration for straightforward circuit connection.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for different environments.

Minimum Operating Temperature: -40 °C

Wide operating temperature range allows for use in extreme conditions.

Terminal Finish: TIN

Tin finish provides good conductivity and corrosion resistance.

Case Connection: ISOLATED

Isolated case connection enhances safety and prevents interference in circuits.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during manufacturing processes.

Reference Standard: UL RECOGNIZED

Compliance with UL standards ensures quality and safety in use.

Technical Specifications

Silicone Diode For Alternating Current (SIDAC) MKP1V120RLG attributes and parameters. Explore more Silicone Diode For Alternating Current (SIDAC) devices from Onsemi

Specs

Maximum Breakdown Voltage:

130 V

Minimum Breakdown Voltage:

110 V

Case Connection:

Configuration:

Maximum Holding Current:

100 mA

Nominal Holding Current:

100 mA

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Non Repetitive Peak On-state Current:

4 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

WIRE

Terminal Position:

Trigger Device Type:

Trade Compliance

MKP1V120RLG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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