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MKP1V240RL

Onsemi

MKP1V240RL by Onsemi

MKP1V240RL by Onsemi is a SIDAC diode with 4A peak current, 220V breakdown voltage, and 100mA holding current. It is used in trigger devices, offering -40 to 125 °C operating range. Ideal for applications requiring reliable AC switching in plastic/epoxy package.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

North Shore Components

USA . 5,000 parts In-Stock

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Vyrian

USA . 1,856 parts In-Stock

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1,856

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Digiode

USA . 1,770 parts In-Stock

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1,770

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$4.977

100+ parts

$4.529

1k+ parts

$4.081

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100

$4.977

$4.529

$4.081

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Kulean Microsystems

USA . 7,365 parts In-Stock

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7,365

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TANS Electronics

Latvia . 6,925 parts In-Stock

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6,925

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SupplyDigital Components

Austria . 5,724 parts In-Stock

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5,724

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Corphita

USA . 1,793 parts In-Stock

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1,793

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Problanco Electronics

Mexico . 1,208 parts In-Stock

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UHIMA Technologies

Türkiye . 882 parts In-Stock

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882

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Corohmni

South Africa . 55 parts In-Stock

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Overview

Discover the cutting-edge MKP1V240RL silicone diode by Onsemi, a leading manufacturer known for top-quality products. Designed for alternating current applications, this SIDAC offers unmatched reliability and performance. With a non-repetitive peak on-state current of 4A and a nominal holding current of 100mA, this product ensures efficient operation. Whether used in industrial equipment or consumer electronics, the MKP1V240RL provides outstanding value and benefits to customers looking for a superior solution. Trust Onsemi for excellence in semiconductor technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material ensures the SIDAC has good thermal conductivity and can withstand high temperatures.

Nominal Holding Current: 100 mA

The nominal holding current of 100 mA ensures stable operation and reliability of the SIDAC in alternating current applications.

Minimum Breakdown Voltage: 220 V

The high minimum breakdown voltage of 220 V provides protection against voltage spikes and ensures the SIDAC can handle high voltage applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C allows the SIDAC to operate in a wide range of temperature environments without degrading performance.

Trigger Device Type: SIDAC

The SIDAC trigger device type ensures precise triggering and reliable operation in alternating current circuits.

Technical Specifications

Silicone Diode For Alternating Current (SIDAC) MKP1V240RL attributes and parameters. Explore more Silicone Diode For Alternating Current (SIDAC) devices from Onsemi

Specs

Maximum Breakdown Voltage:

250 V

Minimum Breakdown Voltage:

220 V

Case Connection:

Configuration:

Maximum Holding Current:

100 mA

Nominal Holding Current:

100 mA

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Non Repetitive Peak On-state Current:

4 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

WIRE

Terminal Position:

Trigger Device Type:

Trade Compliance

MKP1V240RL Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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