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MKP1V130RLG

Onsemi

MKP1V130RLG by Onsemi

MKP1V130RLG by Onsemi is a SIDAC diode with 4A peak current, 120V breakdown voltage, and 100mA holding current. It is used in trigger devices, has an operating range of -40 to 125 °C, and features UL recognition for applications requiring reliable switching performance.

Median Price

$4.073

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 70 parts In-Stock

1+ parts

$4.073

100+ parts

$3.706

1k+ parts

$3.340

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70

$4.073

$3.706

$3.340

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Distributors (In-Stock)

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Digiode

USA . 1,589 parts In-Stock

1+ parts

$3.869

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$3.869

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Vyrian

USA . 5,182 parts In-Stock

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5,182

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Distributors (Availability)

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Corphita

USA . 2,029 parts In-Stock

1+ parts

$3.666

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2,029

$3.666

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Corohmni

South Africa . 408 parts In-Stock

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$4.073

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408

$4.073

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Advanced Electronics

New Zealand . 70 parts In-Stock

1+ parts

$4.073

100+ parts

$3.706

1k+ parts

$3.340

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-

70

$4.073

$3.706

$3.340

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Component Stockers USA

USA . 380 parts In-Stock

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$99.990

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380

$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 28,854 parts In-Stock

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Kulean Microsystems

USA . 5,528 parts In-Stock

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Problanco Electronics

Mexico . 4,132 parts In-Stock

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SupplyDigital Components

Austria . 1,469 parts In-Stock

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TANS Electronics

Latvia . 1,149 parts In-Stock

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UHIMA Technologies

Türkiye . 490 parts In-Stock

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490

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Overview

Discover the superior quality and reliability of the Onsemi MKP1V130RLG SIDAC diode, designed to provide efficient performance for a wide range of alternating current applications. With a durable plastic/epoxy package body and UL recognized standards, this single configuration diode offers unmatched value and benefits. From its high non-repetitive peak on-state current to its wide operating temperature range, this product is ideal for customers seeking dependable and cost-effective solutions. Upgrade your electronics with the MKP1V130RLG and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the diode lightweight and durable, ensuring a longer lifespan.

Configuration: SINGLE

The single configuration design simplifies the setup process and makes it easy to integrate into various electronic circuits.

Non Repetitive Peak On-state Current: 4 A

With a high non repetitive peak on-state current of 4A, this diode can handle high voltage and current applications without any issues.

Nominal Holding Current: 100 mA

The nominal holding current of 100 mA ensures stable operation of the diode in different circuit conditions, providing reliable performance.

Minimum Breakdown Voltage: 120 V

The minimum breakdown voltage of 120 V indicates the voltage at which the diode can conduct electricity, making it suitable for various AC applications.

Package Shape: ROUND

The round package shape offers a compact design, making it easy to fit into tight spaces and reducing the overall footprint of the circuit.

Terminal Form: WIRE

The wire terminal form simplifies the connection process and provides a secure and stable electrical connection, ensuring reliable performance.

No. of Terminals: 2

Having 2 terminals makes the diode easy to connect in a circuit and allows for simple wiring and integration.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this diode can withstand high-temperature environments without losing functionality.

Trigger Device Type: SIDAC

Being a SIDAC trigger device type, this diode has enhanced triggering capabilities, making it suitable for various AC applications.

Reference Standard: UL RECOGNIZED

Being UL Recognized ensures that the diode meets specific safety and performance standards, providing peace of mind to users.

Technical Specifications

Silicone Diode For Alternating Current (SIDAC) MKP1V130RLG attributes and parameters. Explore more Silicone Diode For Alternating Current (SIDAC) devices from Onsemi

Specs

Maximum Breakdown Voltage:

140 V

Minimum Breakdown Voltage:

120 V

Case Connection:

Configuration:

Maximum Holding Current:

100 mA

Nominal Holding Current:

100 mA

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Non Repetitive Peak On-state Current:

4 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

WIRE

Terminal Position:

Trigger Device Type:

Trade Compliance

MKP1V130RLG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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