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MCR69-3

Onsemi

MCR69-3 by Onsemi

MCR69-3 by Onsemi is a single SCR with max DC gate trigger current of 30mA and non-repetitive peak on-state current of 300A. It has a package style of flange mount and is ideal for applications requiring high on-state current handling capabilities in temperatures ranging from -40 to 125 °C.

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Digiode

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Flex Direct, LLC

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Elcom Components

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MISTER SPROCKETS

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Inventory MP

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Odintec Ltd.

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Semtec, LLC

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First Choice Components Inc.

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ECAB

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PC Components Company LLC

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Component Stockers USA

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Problanco Electronics

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Overview

Unlock the power of reliability with the MCR69-3 by Onsemi. As a leading manufacturer in the industry, Onsemi's Silicon Controlled Rectifiers (SCR) guarantee top-notch quality and performance. With a maximum on-state current of 25A and non repetitive peak on-state current of 300A, this product is perfect for a wide range of applications. Whether you need it for industrial machinery or consumer electronics, the MCR69-3 offers unparalleled value and benefits. Trust Onsemi to deliver excellence in every product they create.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this SCR lightweight and durable, ensuring long-term reliability.

Maximum DC Gate Trigger Current: 30 mA

With a high maximum DC gate trigger current of 30 mA, this SCR is capable of fast and reliable switching operations.

Configuration: SINGLE

The single configuration simplifies the design and implementation of the SCR in various applications, making it easy to use.

Non Repetitive Peak On-state Current: 300 A

The high non repetitive peak on-state current rating of 300 A allows this SCR to handle high power loads efficiently.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact form factor for easy installation and integration into different systems.

Terminal Form: THROUGH-HOLE

The through-hole terminal form ensures secure and reliable connections, making the SCR suitable for various mounting methods.

Maximum On-state Current: 25 A

The maximum on-state current of 25 A allows for efficient current conduction, making this SCR suitable for moderate power applications.

Maximum Leakage Current: 2 mA

The low maximum leakage current of 2 mA ensures minimal power loss when the SCR is in the off-state, contributing to energy efficiency.

Repetitive Peak Reverse Voltage: 100 V

The repetitive peak reverse voltage rating of 100 V provides reliable protection against reverse voltage surges, ensuring the longevity of the SCR.

No. of Terminals: 3

Having 3 terminals allows for easy connection and control of the SCR in different circuits, enhancing its versatility.

Package Style (Meter): FLANGE MOUNT

The flange mount package style makes installation and mounting of the SCR convenient and secure in various industrial applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C allows the SCR to operate reliably in high-temperature environments.

Trigger Device Type: SCR

Being an SCR, this device provides precise and controlled switching characteristics, making it ideal for many power control applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C ensures the SCR can function effectively in harsh cold conditions.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good conductivity and solderability, ensuring secure connections for reliable performance.

Terminal Position: SINGLE

The single terminal position simplifies the installation process and enhances the overall ease of use of this SCR.

Maximum RMS On-state Current: 25 A

The high maximum RMS on-state current rating of 25 A allows for efficient and reliable conduction of alternating current.

Maximum DC Gate Trigger Voltage: 1.5 V

The low maximum DC gate trigger voltage of 1.5 V ensures energy-efficient and precise triggering of the SCR for optimal performance.

Case Connection: ANODE

The anode case connection provides a secure and reliable contact point for electrical connections, ensuring stable performance of the SCR.

Repetitive Peak Off-state Voltage: 100 V

The repetitive peak off-state voltage rating of 100 V ensures reliable protection against voltage surges in the off-state, enhancing the durability of the SCR.

Minimum Critical Rate of Rise of Off-state Voltage: 10 V/us

The minimum critical rate of rise of off-state voltage of 10 V/us indicates the SCR's ability to withstand rapid changes in off-state voltage, making it suitable for dynamic applications.

Maximum Holding Current: 50 mA

The high maximum holding current of 50 mA ensures the SCR remains in the on-state reliably once triggered, providing stable operation in various circuit configurations.

Nominal Circuit Commutated Turn-off Time: 1 us

The low nominal circuit commutated turn-off time of 1 us indicates fast turn-off characteristics, allowing for efficient and precise control of current flow in the circuit.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR69-3 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Case Connection:

Nominal Circuit Commutated Turn-off Time:

1 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

10 V/us

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

50 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

300 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

25 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

25 A

Repetitive Peak Off-state Voltage:

100 V

Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

MCR69-3 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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