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MCR68-2

Onsemi

MCR68-2 by Onsemi

MCR68-2 by Onsemi is a single SCR with max DC gate trigger current of 30mA and non-repetitive peak on-state current of 100A. It has a package style of flange mount and is ideal for applications requiring high on-state current handling capabilities in temperatures ranging from -40 to 125 °C.

Median Price

$0.422

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

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A2Z Electronics, Inc.

USA . 1,259 parts In-Stock

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Bristol Electronics

USA . 1,259 parts In-Stock

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$0.422

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$0.315

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$0.292

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$0.422

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$0.292

Digiode

USA . 615 parts In-Stock

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Vyrian

USA . 523 parts In-Stock

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Sunrise Surplus Inc.

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Prism Electronics

USA . 75 parts In-Stock

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Beltway Electronics Company

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Sogenti Electronics

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Kepictronics

USA . 13,000 parts In-Stock

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Kulean Microsystems

USA . 6,642 parts In-Stock

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Problanco Electronics

Mexico . 6,540 parts In-Stock

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TANS Electronics

Latvia . 6,068 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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SupplyDigital Components

Austria . 3,651 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 234 parts In-Stock

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Corohmni

South Africa . 106 parts In-Stock

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Perfect Parts

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Overview

Unlock the power of innovation with the MCR68-2 by Onsemi, a top-of-the-line Silicon Controlled Rectifier that delivers unmatched quality and reliability. Manufactured by the reputable Onsemi brand, this SCR is perfect for a wide range of applications, offering customers exceptional value and benefits. With a maximum on-state current of 12A and a non repetitive peak on-state current of 100A, this product ensures optimal performance and efficiency. Discover the difference that the MCR68-2 can make in your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY package material provides good insulation and protection for the SCR, making it durable and reliable in various operating conditions.

Maximum DC Gate Trigger Current: 30 mA

High gate trigger current ensures reliable and consistent switching of the SCR, making it suitable for a wide range of applications.

Configuration: SINGLE

Single configuration simplifies the design and installation process, making the SCR easy to use and integrate into different systems.

Non Repetitive Peak On-state Current: 100 A

High on-state current capability allows the SCR to handle large surge currents, making it suitable for high-power applications.

Package Shape: RECTANGULAR

Rectangular package shape facilitates easy mounting and handling of the SCR, making it convenient for installation in various setups.

Maximum On-state Current: 12 A

With a maximum on-state current of 12 A, this SCR can efficiently handle medium to high-power loads, making it versatile for different applications.

Maximum Leakage Current: 2 mA

Low leakage current ensures minimal power wastage and better efficiency of the SCR, making it a cost-effective choice for long-term use.

Repetitive Peak Reverse Voltage: 50 V

Suitable for low to medium voltage applications, the SCR's repetitive peak reverse voltage of 50 V offers reliable performance and protection against reverse voltage surges.

No. of Terminals: 3

With three terminals, the SCR provides easy connections and flexibility in circuit design, allowing for various control options and configurations.

Package Style (Meter): FLANGE MOUNT

Flange mount package style ensures secure mounting and heat dissipation for the SCR, contributing to its reliability and longevity in operation.

Maximum Operating Temperature: 125 °C

High maximum operating temperature tolerance of 125 °C enables the SCR to operate in harsh environments and high-temperature conditions without performance degradation.

Trigger Device Type: SCR

As an SCR, the trigger device type offers reliable and fast switching performance, making it suitable for applications that require precise control and high efficiency.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature of -40 °C ensures the SCR's functionality in cold environments, making it versatile for use in different temperature conditions.

Terminal Finish: TIN LEAD

TIN LEAD terminal finish provides good conductivity and solderability, ensuring secure connections and reliable performance of the SCR in various applications.

Terminal Position: SINGLE

Single terminal position simplifies installation and wiring of the SCR, making it user-friendly and cost-effective for integration in different systems.

Maximum RMS On-state Current: 12 A

With a maximum RMS on-state current of 12 A, this SCR can handle steady-state currents efficiently, ensuring stable operation in continuous load conditions.

Maximum DC Gate Trigger Voltage: 1.5 V

Low gate trigger voltage of 1.5 V allows for precise control and efficient triggering of the SCR, making it suitable for low-power applications requiring fast switching.

Case Connection: ANODE

Anode case connection simplifies the circuit design and enhances the performance of the SCR, ensuring reliable operation and protection against reverse current flow.

Repetitive Peak Off-state Voltage: 50 V

Repetitive peak off-state voltage of 50 V provides reliable insulation and protection for the SCR, making it suitable for low to medium voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 10 V/us

Minimum critical rate of rise of off-state voltage ensures stable performance and protection against voltage spikes, making the SCR reliable in dynamic operating conditions.

Maximum Holding Current: 50 mA

High holding current of 50 mA ensures the SCR remains in the on-state even after the triggering signal is removed, providing reliable operation and protection against false turn-off.

Nominal Circuit Commutated Turn-off Time: 1 us

Fast turn-off time of 1 us ensures precise control and efficient switching of the SCR, making it suitable for applications that require high-speed operation and responsiveness.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR68-2 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Case Connection:

Nominal Circuit Commutated Turn-off Time:

1 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

10 V/us

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

50 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

100 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

12 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

50 V

Repetitive Peak Reverse Voltage:

50 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

MCR68-2 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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